MMBTA 14 LT1 Infineon Technologies, MMBTA 14 LT1 Datasheet - Page 3

• Manufacturer Part Number: MMBTA 14 LT1
• Description: TRANSISTOR DARL NPN 30V SOT-23
• Manufacturer: Infineon Technologies

Specifications of MMBTA 14 LT1

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.3 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000, 20000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA 14 LT1; MMBTA14LT1INTR; MMBTA14LT1XT; SP000010862

h
DC current gain h
V
Base-emitter saturation voltage
I
C
C
FE
CE
=
mA
10
10
10
10
10
10
10
10
5
5
= 5 V
5
5
5
10
3
2
1
0
6
5
4
3
(V
0
SMBTA 13/14
SMBTA 13/14
-1
BEsat
), h
10
0
125
FE
-55 ˚C
1.0
25 ˚C
FE
˚C
= 1000
=
10
(I
1
C
)
2.0
150
-50 ˚C
25 ˚C
10
˚C
2
V
BEsat
C
EHP00827
V
EHP00829
mA
10
3.0
3
3
Collector-emitter saturation voltage
I
Collector cutoff current I
V
C
C
CB0
CBO
= (V
mA
10
10
10
10
nA
10
10
10
10
10
5
5
5
5
5
3
2
1
0
= 30 V
1
0
4
3
2
0
SMBTA 13/14
0
SMBTA 13/14
CEsat
), h
FE
0.5
SMBTA14/MMBTA14
50
= 1000
max
CBO
1.0
100
=
2007-04-19
150
-50 ˚C
V
25 ˚C
(T
T
CEsat
A
EHP00826
V
typ
EHP00828
˚C
A
˚C
)
150
1.5