BCP53T1G ON Semiconductor, BCP53T1G Datasheet

TRANS PNP AUDIO 1.5A80V SOT223

BCP53T1G

Manufacturer Part Number
BCP53T1G
Description
TRANS PNP AUDIO 1.5A80V SOT223
Manufacturer
ON Semiconductor
Type
PNPr
Datasheets

Specifications of BCP53T1G

Transistor Type
PNP
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
1.5W
Frequency - Transition
50MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
100V
Emitter-base Voltage
5V
Collector Current (dc) (max)
1.5A
Dc Current Gain (min)
25
Power Dissipation
1.5W
Frequency (max)
50MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Package
4SOT-223
Supplier Package
SOT-223
Minimum Dc Current Gain
25@5mA@2V|40@150mA@2V|25@500mA@2V
Maximum Operating Frequency
50(Typ) MHz
Maximum Dc Collector Current
1.5 A
Maximum Collector Emitter Saturation Voltage
0.5@50mA@500mA V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1.5 A
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
25 at 5 mA at 2 V
Minimum Operating Temperature
- 65 C
Current, Collector
1.5 A
Current, Gain
25
Frequency
50 MHz
Polarity
PNP
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
-80 V
Voltage, Collector To Base
-100 V
Voltage, Collector To Emitter
-80 V
Voltage, Collector To Emitter, Saturation
-0.5 V
Voltage, Emitter To Base
-5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
BCP53T1GOSTR

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BCP53 Series
PNP Silicon
Epitaxial Transistors
amplifier applications. The device is housed in the SOT−223 package
which is designed for medium power surface mount applications.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 7
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
Operating and Storage
Thermal Resistance,
Lead Temperature for Soldering,
Time in Solder Bath
This PNP Silicon Epitaxial transistor is designed for use in audio
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
BCP53T1 = AH
BCP53−10T1 = AH−10
BCP53−16T1 = AH−16
Compliant
High Current: 1.5 A
NPN Complement is BCP56
The SOT−223 Package can be soldered using wave or reflow. The
Device Marking:
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
@ T
Derate above 25°C
Temperature Range
Junction to Ambient
(surface mounted)
0.0625″ from case
A
= 25°C (Note 1.)
Characteristic
Rating
(T
C
= 25°C unless otherwise noted)
Symbol
Symbol
T
V
V
V
J
R
P
, T
CEO
CBO
EBO
T
I
qJA
C
D
L
stg
−65 to
Value
−100
+150
−5.0
Max
83.3
−80
260
1.5
1.5
12
10
1
mW/°C
Watts
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
°C
°C
s
†For information on tape and reel specifications,
BCP53T1G
BCP53−10T1G
BCP53−16T1G
BCP53−16T3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CURRENT SURFACE MOUNT
Device
(Note: Microdot may be in either location)
CASE 318E
SOT−223
STYLE 1
MEDIUM POWER HIGH
PNP TRANSISTORS
ORDERING INFORMATION
BASE
1
http://onsemi.com
A
Y
W
XXXXX = Specific Device Code
G
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SOT−223
SOT−223
SOT−223
SOT−223
COLLECTOR 2,4
MARKING DIAGRAM
EMITTER 3
Publication Order Number:
1
= Assembly Location
= Year
= Work Week
= Pb−Free Package
XXXXXG
AYW
1000/T ape & Reel
1000/T ape & Reel
1000/T ape & Reel
4000/T ape & Reel
G
Shipping
BCP53T1/D

Related parts for BCP53T1G

BCP53T1G Summary of contents

Page 1

... W = Work Week XXXXX = Specific Device Code = Pb−Free Package G (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BCP53T1G SOT−223 1000/T ape & Reel (Pb−Free) BCP53−10T1G SOT−223 1000/T ape & Reel (Pb−Free) BCP53−16T1G SOT−223 1000/T ape & Reel (Pb− ...

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ELECTRICAL CHARACTERISTICS (T Characteristics OFF CHARACTERISTICS Collector−Base Breakdown Voltage (I = −100 mAdc Collector−Emitter Breakdown Voltage (I = −1.0 mAdc Collector−Emitter Breakdown Voltage (I = −100 mAdc Emitter−Base Breakdown Voltage (I = −10 mAdc, ...

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IC/ BCP53, −10, −16 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0 COLLECTOR CURRENT (mA) C Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 180 150° 160 ...

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Page 7

BCP53, −10 Vce = 2 V 1.1 1.0 0.9 −55°C 0.8 0.7 +25°C 0.6 0.5 0.4 +150°C 0.3 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 7. BCP53, −10 Base Emitter Turn−On Voltage vs. Collector Current V ...

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... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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