2SA1162-Y(T5L,F,T) Toshiba, 2SA1162-Y(T5L,F,T) Datasheet

2SA1162-Y(T5L,F,T)

Manufacturer Part Number

2SA1162-Y(T5L,F,T)

Description

TRANS PNP 50V 150MA S-MINI

Manufacturer

Toshiba

Datasheet

1.2SA1162-YT5LFT.pdf (3 pages)

Specifications of 2SA1162-Y(T5L,F,T)

Transistor Type

PNP

Current - Collector (ic) (max)

150mA

Voltage - Collector Emitter Breakdown (max)

50V

Vce Saturation (max) @ Ib, Ic

300mV @ 10mA, 100mA

Dc Current Gain (hfe) (min) @ Ic, Vce

120 @ 2mA, 6V

Power - Max

150mW

Frequency - Transition

80MHz

Mounting Type

Surface Mount

Package / Case

SC-59-3, SMT3, SOT-346, TO-236

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Other names

2SA1162-YTR

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Audio Frequency General Purpose Amplifier Applications

• High voltage and high current:

• Excellent h

• High h

• Low noise: NF = 1dB (typ.), 10dB (max)

• Complementary to 2SC2712

• Small package

Absolute Maximum Ratings

Electrical Characteristics

Marking

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

Note: h

FE:

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol

linearity: h

= 70~400

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

= 0.95 (typ.)

= −0.1 mA)/h

(Ta = 25°C)

CEO

(Ta = 25°C)

Symbol

CE (sat)

CBO

EBO

= −50 V, I

CBO

CEO

EBO

stg

2SA1162

(Note)

Rg = 10 kΩ,

= −100 mA, I

−55~125

= −150 mA (max)

= −2 mA)

Rating

= −50 V, I

= −5 V, I

= −6 V, I

= −10 V, I

= −6 V, I

−150

−50

−30

150

125

−5

Test Condition

= 0

= −2 mA

= −0.1 mA, f = 1 kHz,

= 0

= 0, f = 1 MHz

= −1 mA

= −10 mA

Unit

°C

Weight: 0.012 g (typ.)

JEDEC

JEITA

TOSHIBA

Min

⎯

Typ.

−0.1

1.0

⎯

TO-236MOD

2-3F1A

SC-59

2007-11-01

−0.1

−0.3

2SA1162

Max

400

⎯

Unit: mm

MHz

Unit

μA

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2SA1162-Y(T5L,F,T) Summary of contents

Page 1

... CE C (Note) = −100 mA − (sat − − − MHz − −0.1 mA kHz kΩ, 1 2SA1162 JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Min Typ. Max ⎯ ⎯ −0.1 ⎯ ⎯ −0.1 ⎯ 70 400 ⎯ −0.1 −0.3 ⎯ ⎯ 80 ⎯ 4 ⎯ ...

Page 2

... 2 2SA1162 2007-11-01 ...

Page 3

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SA1162 2007-11-01 ...

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