2SA1162-YT5LFT Toshiba, 2SA1162-YT5LFT Datasheet
2SA1162-YT5LFT
Manufacturer Part Number
2SA1162-YT5LFT
Description
Bipolar Small Signal x34 Small Signal Transistor
Manufacturer
Toshiba
Datasheet
1.2SA1162-YT5LFT.pdf
(3 pages)
Specifications of 2SA1162-YT5LFT
Dc Collector/base Gain Hfe Min
120
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
S-Mini
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 150 mA
Power Dissipation
150 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Audio Frequency General Purpose Amplifier Applications
• High voltage and high current:
• Excellent h
• High h
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SC2712
• Small package
Absolute Maximum Ratings
Electrical Characteristics
Marking
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Note: h
FE:
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE
h
Characteristics
Characteristics
FE
FE
classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol
linearity: h
= 70~400
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
FE
= 0.95 (typ.)
(I
C
= −0.1 mA)/h
(Ta = 25°C)
V
CEO
(Ta = 25°C)
V
Symbol
Symbol
V
V
V
CE (sat)
I
I
T
CBO
EBO
h
C
= −50 V, I
P
NF
CBO
CEO
EBO
I
I
T
f
stg
FE
C
B
T
ob
C
2SA1162
j
(Note)
FE
V
V
V
I
V
V
V
Rg = 10 kΩ,
(I
C
C
CB
EB
CE
CE
CB
CE
C
= −100 mA, I
−55~125
= −150 mA (max)
= −2 mA)
Rating
= −50 V, I
= −5 V, I
= −6 V, I
= −10 V, I
= −10 V, I
= −6 V, I
−150
−50
−50
−30
150
125
−5
1
Test Condition
C
C
C
E
C
E
= 0
= −2 mA
= −0.1 mA, f = 1 kHz,
B
= 0
= 0, f = 1 MHz
= −1 mA
= −10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
70
80
⎯
⎯
⎯
⎯
⎯
Typ.
−0.1
1.0
⎯
⎯
⎯
⎯
4
TO-236MOD
2-3F1A
SC-59
2007-11-01
−0.1
−0.1
−0.3
2SA1162
Max
400
10
⎯
7
Unit: mm
MHz
Unit
μA
μA
pF
dB
V
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2SA1162-YT5LFT Summary of contents
Page 1
... CE C (Note) = −100 mA − (sat − − − MHz − −0.1 mA kHz kΩ, 1 2SA1162 JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Min Typ. Max ⎯ ⎯ −0.1 ⎯ ⎯ −0.1 ⎯ 70 400 ⎯ −0.1 −0.3 ⎯ ⎯ 80 ⎯ 4 ⎯ ...
Page 2
... 2 2SA1162 2007-11-01 ...
Page 3
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 3 2SA1162 2007-11-01 ...