EMF18XV6T5G ON Semiconductor, EMF18XV6T5G Datasheet - Page 2

• Manufacturer Part Number: EMF18XV6T5G
• Description: TRANS BRT NPN/PNP DL 50V SOT-563
• Manufacturer: ON Semiconductor

Specifications of EMF18XV6T5G

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V, 60V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 1mA, 6V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 140MHz
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
4. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ELECTRICAL CHARACTERISTICS
Q1: NPN
Q2: PNP
Collector−Base Breakdown Voltage (I
Collector−Emitter Breakdown Voltage (I
Emitter−Base Breakdown Voltage (I
Collector−Base Cutoff Current (V
Emitter−Base Cutoff Current (V
Collector−Emitter Saturation Voltage (Note 4)
(I
DC Current Gain (Note 4) (V
Transition Frequency (V
Output Capacitance (V
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current (V
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 4) (I
DC Current Gain (V
Collector-Emitter Saturation Voltage (I
Output Voltage (on) (V
Output Voltage (off) (V
Input Resistor
Resistor Ratio
C
= −50 mAdc, I
B
= −5.0 mAdc)
CE
CB
CC
CC
= 10 V, I
CE
= −12 Vdc, I
= 5.0 V, V
= 5.0 V, V
= −12 Vdc, I
Characteristic
CE
EB
EB
= −6.0 Vdc, I
C
CB
CB
= 5.0 mA)
= −5.0 Vdc, I
= 6.0 V, I
CE
E
= −30 Vdc, I
B
B
= 50 V, I
C
= −50 mAdc, I
C
= 3.5 V, R
= 0.5 V, R
E
= 50 V, I
C
= −50 mAdc, I
C
C
= 10 mA, I
= 0 Adc, f = 1.0 MHz)
= 10 mA, I
= −1.0 mAdc, I
= −2.0 mAdc, f = 30 MHz)
(T
C
A
C
E
= 0)
= 25°C) (Note 2)
= −1.0 mAdc)
= 0)
B
B
L
L
E
C
= 0)
= 0)
E
= 1.0 kW)
= 1.0 kW)
= 0)
= 2.0 mA, I
E
B
= 0)
= 0.3 mA)
E
= 0)
= 0)
B
http://onsemi.com
= 0)
B
= 0)
2
V
V
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
R1/R2
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
I
CE(sat)
I
V
I
C
V
h
h
CBO
CEO
EBO
CBO
EBO
R1
f
OH
FE
OL
FE
OB
T
32.9
−6.0
Min
−60
−50
120
4.9
0.8
50
50
80
−
−
−
−
−
−
−
−
−
−
Typ
140
140
1.0
3.5
47
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
61.1
−0.5
−0.5
−0.5
100
500
560
0.1
0.2
1.2
−
−
−
−
−
−
−
−
−
mAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
nA
mA
pF
−