EMF18XV6T5G ON Semiconductor, EMF18XV6T5G Datasheet

TRANS BRT NPN/PNP DL 50V SOT-563

EMF18XV6T5G

Manufacturer Part Number
EMF18XV6T5G
Description
TRANS BRT NPN/PNP DL 50V SOT-563
Manufacturer
ON Semiconductor
Datasheet

Specifications of EMF18XV6T5G

Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V, 60V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V / 120 @ 1mA, 6V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
140MHz
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EMF18XV6T5G
Manufacturer:
ON Semiconductor
Quantity:
6 400
Part Number:
EMF18XV6T5G
Manufacturer:
ON
Quantity:
30 000
EMF18XV6T5
Dual Transistor -
Power Management
NPN/PNP Dual (Complementary)
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 2
MAXIMUM RATINGS
Q1
Q2
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation
Derate above 25°C
Thermal Resistance,
Total Device Dissipation
Derate above 25°C
Thermal Resistance,
Junction and Storage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Low V
These are Pb−Free Devices
Junction-to-Ambient
Junction-to-Ambient
Temperature Range
(Both Junctions Heated)
(One Junction Heated)
CE(SAT)
Characteristic
Characteristic
Rating
Rating
, t0.5 V
T
T
A
A
= 25°C
= 25°C
Symbol
Symbol
Symbol
Symbol
T
V
V
V
V
V
R
R
J
P
P
CBO
CEO
CEO
CBO
EBO
, T
I
I
qJA
qJA
C
C
D
D
stg
−55 to +150
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note1)
Value
Value
−100
−6.0
Max
Max
100
−60
−50
357
350
500
250
2.9
4.0
50
50
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Unit
Unit
Vdc
Vdc
mW
mW
°C
V
V
V
†For information on tape and reel specifications,
EMF18XV6T5
EMF18XV6T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
(Note: Microdot may be in either location)
Device
Q
(3)
(4)
1
ORDERING INFORMATION
UV = Specific Device Code
M
G
MARKING DIAGRAM
R
http://onsemi.com
2
= Date Code
= Pb−Free Package
6
1
CASE 463A
(Pb−Free)
(Pb−Free)
SOT−563
SOT−563
R
Package
SOT−563
PLASTIC
UV M G
1
(5)
G
Publication Order Number:
1
(2)
8000/Tape & Reel
8000/Tape & Reel
Shipping
EMF18XV6/D
(1)
(6)
Q
2

Related parts for EMF18XV6T5G

EMF18XV6T5G Summary of contents

Page 1

... ORDERING INFORMATION Device Package Shipping EMF18XV6T5 SOT−563 8000/Tape & Reel (Pb−Free) EMF18XV6T5G SOT−563 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Publication Order Number: ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Q1: NPN Collector-Base Cutoff Current ( Collector-Emitter Cutoff Current ( Emitter-Base Cutoff Current ( Collector-Base Breakdown Voltage ( mA, I ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS — Q1, NPN -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 1. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 0 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS − Q2, PNP T = 25°C A 120 COLLECTOR VOLTAGE (V) CE Figure 6. I − 1.5 1 0.5 0 0.01 0.1 1 ...

Page 5

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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