PBLS6003D,115 NXP Semiconductors, PBLS6003D,115 Datasheet - Page 3

• Manufacturer Part Number: PBLS6003D,115
• Description: LOADSWITCH PNP 60V 1A SOT457
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBLS6003D,115

• Package / Case: SC-74-6
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 700mA
• Voltage - Collector Emitter Breakdown (max): 50V, 60V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 500mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
• Current - Collector Cutoff (max): 1µA, 100nA
• Frequency - Transition: 185MHz
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 10 KOhm @ NPN
• Typical Resistor Ratio: 1 @ NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V @ NPN or 60 V @ PNP
• Peak Dc Collector Current: 100 mA @ NPN or 1000 mA @ PNP
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059266115; PBLS6003D T/R; PBLS6003D T/R

NXP Semiconductors
5. Limiting values
PBLS6003D_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
TR1; PNP low V
V
V
V
I
I
I
I
P
TR2; NPN resistor-equipped transistor
V
V
V
V
I
I
P
Per device
P
T
T
T
C
CM
B
BM
O
CM
stg
j
amb
CBO
CEO
EBO
tot
CBO
CEO
EBO
I
tot
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
Device mounted on a ceramic PCB, Al
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
total power dissipation
storage temperature
junction temperature
ambient temperature
positive
negative
CEsat
transistor
Rev. 02 — 7 September 2009
2
O
3
, standard footprint.
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
open emitter
open base
open collector
T
T
p
p
amb
amb
amb
1 ms
1 ms
25 C
25 C
25 C
[1]
[2]
[3]
[1]
[2]
[3]
[1]
[2]
[3]
[1]
[2]
[3]
60 V PNP BISS loadswitch
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
65
65
PBLS6003D
© NXP B.V. 2009. All rights reserved.
Max
250
350
400
50
50
10
+40
100
100
200
200
200
400
530
600
+150
150
+150
80
60
5
700
850
1
2
300
1
10
Unit
V
V
V
mA
mA
A
A
mA
A
mW
mW
mW
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
2
C
C
C
.
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