PBLS6003D,115 NXP Semiconductors, PBLS6003D,115 Datasheet - Page 11

• Manufacturer Part Number: PBLS6003D,115
• Description: LOADSWITCH PNP 60V 1A SOT457
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBLS6003D,115

• Package / Case: SC-74-6
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 700mA
• Voltage - Collector Emitter Breakdown (max): 50V, 60V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 500mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
• Current - Collector Cutoff (max): 1µA, 100nA
• Frequency - Transition: 185MHz
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 10 KOhm @ NPN
• Typical Resistor Ratio: 1 @ NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V @ NPN or 60 V @ PNP
• Peak Dc Collector Current: 100 mA @ NPN or 1000 mA @ PNP
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059266115; PBLS6003D T/R; PBLS6003D T/R

NXP Semiconductors
8. Test information
PBLS6003D_2
Product data sheet
Fig 17. BISS transistor switching time definition
Fig 18. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
B
C
I
C
= 0.5 A; I
oscilloscope
t
d
Bon
t
on
Rev. 02 — 7 September 2009
= 25 mA; I
V
t
I
r
(probe)
450
Boff
R1
= 25 mA; R1 = open; R2 = 100 ; R
R2
R
B
V
BB
R
C
V
CC
DUT
V
o
mgd624
(probe)
I
450
Bon
t
s
I
(100 %)
Boff
t
60 V PNP BISS loadswitch
off
oscilloscope
B
PBLS6003D
= 300 ; R
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
t
f
C
= 20
I
006aaa266
C
(100 %)
11 of 16
t