IMD16AT108 Rohm Semiconductor, IMD16AT108 Datasheet - Page 2

• Manufacturer Part Number: IMD16AT108
• Description: TRANS PNP/NPN 50V 500MA SOT-457
• Manufacturer: Rohm Semiconductor

Specifications of IMD16AT108

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K, 2.2K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V / 82 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 150MHz
• Power Dissipation Pd: 300mW
• Dc Collector Current: 100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 250
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IMD16AT108; IMD16AT108TR

DTr
DTr
○
IMD16A
∗
c
www.rohm.com
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗
Electrical characteristics (Ta=25°C)
Transition frequency of mounted transistor.
1 Measured using pulse current.
2009 ROHM Co., Ltd. All rights reserved.
1
2
Parameter
Parameter
∗
2 Transition frequency of mounted transistor.
Symbol
Symbol
R
V
BV
BV
BV
V
V
V
I
2
I
O(off)
I
CE(sat)
h
O(on)
R
G
CBO
EBO
R
I(off)
I(on)
f
I
/ R
f
T
I
FE
CBO
CEO
EBO
T
1
I
1
∗
∗
∗
1
1
2
Min.
1.54
Min.
100
−2
82
50
50
70
−
−
−
−
−
8
5
−
−
−
−
Typ.
Typ.
250
250
250
100
2.2
10
−
−
−
−
−
−
−
−
−
−
−
−
Max.
Max.
−0.3
−0.3
−0.5
2.86
600
130
0.5
0.5
0.3
−3
12
−
−
−
−
−
−
−
2/3
MHz
MHz
Unit
Unit
mA
kΩ
µA
µA
kΩ
µA
V
V
V
V
V
V
−
−
−
V
V
I
V
V
I
V
I
I
I
V
V
I
V
V
O
O
C
C
E
C
CC
O
I
CC
CE
CB
EB
CE
CE
/I
= −5V
= −50mA , V
=1mA
=50µA
/I
=50µA
= −0.3V , I
I
B
= −50mA / −2.5mA
= −5V , I
= −50V , V
= −10V , I
=50V
=4V
=5V , I
=10V , I
=1mA/0.1mA
C
=1mA
E
O
=−5mA , f=100MHz
O
= −100µA
E
= −20mA
I
O
=50mA , f=100MHz
=0V
Conditions
Conditions
= −5V
−
−
−
2009.06 - Rev.E
Data Sheet