IMD16AT108 Rohm Semiconductor, IMD16AT108 Datasheet

TRANS PNP/NPN 50V 500MA SOT-457

IMD16AT108

Manufacturer Part Number
IMD16AT108
Description
TRANS PNP/NPN 50V 500MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of IMD16AT108

Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA, 500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
100K, 2.2K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V / 82 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA / 300mV @ 100µA, 1mA
Frequency - Transition
250MHz
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
NPN / PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
150MHz
Power Dissipation Pd
300mW
Dc Collector Current
100mA
Operating
RoHS Compliant
Dc Current Gain Hfe
250
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IMD16AT108
IMD16AT108TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IMD16AT108
Manufacturer:
Rohm Semiconductor
Quantity:
31 291
Part Number:
IMD16AT108
Manufacturer:
Skyworks
Quantity:
3 953
Part Number:
IMD16AT108
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Power management (dual digital transistors)
1) Two digital class transistors in a SMT package.
2) Up to 500mA can be driven.
3) Low V
DTr
Total
Supply voltage
Input voltage
Output current
c
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
www.rohm.com
DTr
Features
Package, marking, and packaging specifications
Package
Marking
Code
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25°C)
IMD16A
2009 ROHM Co., Ltd. All rights reserved.
200mW per element must not be exceeded.
2
1
(NPN)
(PNP)
CE(sat)
Parameter
Parameter
Parameter
Part No.
of drive transistors for low power dissipation.
Symbol
Symbol
Symbol
V
V
V
Tstg
V
V
Pd
I
CBO
CEO
EBO
I
Tj
CC
C
C
IN
IMD16A
SMT6
T108
3000
D16
300(TOTAL)
−55 to +150
Limits
Limits
Limits
−500
−50
−12
100
150
50
50
5
5
1/3
Unit
Unit
mW
Unit
mA
mA
°C
°C
V
V
V
V
V
Inner circuit
Dimensions (Unit : mm)
ROHM : SMT6
EIAJ : SC-74
DTr2
(4)
(3)
(4)
(3)
R1=2.2kΩ
(5)
(2)
(5)
(2)
R1=100kΩ
R2=22kΩ
(6)
(1)
(6)
DTr1
(1)
2009.06 - Rev.E
Each lead has same dimensions

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IMD16AT108 Summary of contents

Page 1

Power management (dual digital transistors) IMD16A Features 1) Two digital class transistors in a SMT package 500mA can be driven. 3) Low V of drive transistors for low power dissipation. CE(sat) Package, marking, and packaging specifications Part ...

Page 2

IMD16A Electrical characteristics (Ta=25°C) DTr 1 Symbol Parameter V I(off) Input voltage V I(on) Output voltage V O(on) Input current Output current O(off) DC current gain G Transition frequency Input resistance 1 Resistance ratio ...

Page 3

IMD16A Electrical characteristic curves DTr (PNP) 1 100 =0. Ta= −40° Ta=25°C Ta=100° 500m 200m 100m 500µ 10m 20m 50m 100m 200m 500m (A) OUTPUT CURRENT : I O ...

Page 4

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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