BCM857DS,115 NXP Semiconductors, BCM857DS,115 Datasheet - Page 3

• Manufacturer Part Number: BCM857DS,115
• Description: TRANS PNP/PNP 45V 100MA SC74
• Manufacturer: NXP Semiconductors

Specifications of BCM857DS,115

• Package / Case: SC-74-6
• Mounting Type: Surface Mount
• Power - Max: 380mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: 2 PNP (Dual)
• Frequency - Transition: 175MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 380 mW
• Maximum Operating Frequency: 175 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059033115::BCM857DS T/R::BCM857DS T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BCM857BV_BS_DS_6
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
Symbol
Per transistor
V
V
V
I
I
P
Per device
P
T
T
T
Symbol
Per transistor
R
C
CM
j
amb
stg
CBO
CEO
EBO
tot
tot
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Parameter
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
SOT666
SOT363
SOT457
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
SOT666
SOT363
SOT457
SOT666
SOT363
SOT457
Rev. 06 — 28 August 2009
Conditions
in free air
Conditions
open emitter
open base
open collector
single pulse;
t
T
T
p
amb
amb
1 ms
25 C
25 C
PNP/PNP matched double transistors
BCM857BV/BS/DS
[1][2]
[1]
[1]
[1][2]
[1][2]
Min
-
-
-
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
65
65
Typ
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
200
200
250
300
300
380
150
+150
+150
50
45
5
100
200
Max
625
625
500
Unit
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
C
C
C
Unit
K/W
K/W
K/W
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