BFP 640 E6327 Infineon Technologies, BFP 640 E6327 Datasheet - Page 8

• Manufacturer Part Number: BFP 640 E6327
• Description: TRANSISTOR NPN SIGE RF SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 640 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 40GHz
• Noise Figure (db Typ @ F): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
• Gain: 24dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 30mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Collector- Emitter Voltage Vceo Max: 4 V
• Continuous Collector Current: 50 mA
• Emitter- Base Voltage Vebo: 1.2 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP 640 E6327; BFP640E6327; BFP640E6327; BFP640E6327INTR; BFP640E6327XT; SP000012991

Source impedance for min.
noise figure vs. frequency
V
−0.1
0.1
0
CE
−0.2
0.2
−0.3
0.3
= 3 V, I
0.1
−0.4
0.4
0.2 0.3 0.4 0.5
−0.5
0.5
C
I
= 5 mA/ 30 mA
c
= 30mA
3GHz
4GHz
2.4GHz
1
−1
1
5GHz
1.5
1.8GHz
6GHz
2
−1.5
1.5
0.9GHz
3
I
c
4 5
= 5.0mA
−2
2
−3
3
−4
4
−5
5
−10
10
8
2007-05-29
BFP640