BFP 640 E6327 Infineon Technologies, BFP 640 E6327 Datasheet - Page 5

• Manufacturer Part Number: BFP 640 E6327
• Description: TRANSISTOR NPN SIGE RF SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 640 E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 40GHz
• Noise Figure (db Typ @ F): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
• Gain: 24dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 30mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Collector- Emitter Voltage Vceo Max: 4 V
• Continuous Collector Current: 50 mA
• Emitter- Base Voltage Vebo: 1.2 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP 640 E6327; BFP640E6327; BFP640E6327; BFP640E6327INTR; BFP640E6327XT; SP000012991

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
220
180
160
140
120
100
80
60
40
20
-
0
1
0
10
0
/ P
-7
totDC
15
10
30
-6
=
10
45
-5
( t
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
p
60
)
10
-4
75
10
90 105 120 °C
tot
-3
= ( T
10
-2
S
)
T
t
s
p
S
150
10
0
5
Permissible Pulse Load R
Collector-base capacitance C
f = 1MHz
K/W
0.25
0.15
0.05
10
10
10
pF
0.1
0
3
2
1
10
0
-7
10
2
-6
10
4
-5
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
6
-4
10
8
thJS
-3
2007-05-29
10
10
cb
=
-2
= ( V
BFP640
( t
V
t
V
p
s
p
)
CB
CB
10
14
)
0