BFG424F,115 NXP Semiconductors, BFG424F,115 Datasheet - Page 9

• Manufacturer Part Number: BFG424F,115
• Description: TRANS NPN 4.5V 25GHZ SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG424F,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 23dB
• Power - Max: 135mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 25mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1981-2; 934059126115; BFG424F T/R

Philips Semiconductors
BFG424F_1
Product data sheet
7.1 Noise data
Table 8:
V
f
(MHz)
900
2000
CE
Fig 13. Minimum noise figure as a function of collector current; typical values
= 2 V; typical values.
(1) f = 2 GHz
(2) f = 900 MHz
Noise data
I
(mA)
1
2
4
10
15
20
25
30
1
2
4
10
15
20
25
30
C
NF
(dB)
Rev. 01 — 21 March 2006
min
3
2
1
0
0
NF
(dB)
0.7
0.81
1
1.4
1.65
1.9
2.1
2.3
1.3
1.2
1.2
1.6
1.9
2.2
2.5
2.8
min
10
(1)
(2)
ratio
0.67
0.48
0.28
0.02
0.11
0.19
0.25
0.29
0.56
0.43
0.22
0.06
0.13
0.17
0.22
0.27
opt
20
I
NPN 25 GHz wideband transistor
C
(mA)
001aad829
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
(deg)
19.1
17.8
11.7
57.5
57.2
60.8
137.4
63.9
162.4
165.5
166.3
166.5
162.1
155.5
152.2
150.8
30
BFG424F
r
( )
0.40
0.27
0.24
0.19
0.18
0.18
0.19
0.19
0.36
0.25
0.18
0.19
0.20
0.20
0.21
0.25
n
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