BFG424F,115 NXP Semiconductors, BFG424F,115 Datasheet - Page 2

• Manufacturer Part Number: BFG424F,115
• Description: TRANS NPN 4.5V 25GHZ SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG424F,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 23dB
• Power - Max: 135mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 25mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1981-2; 934059126115; BFG424F T/R

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
BFG424F_1
Product data sheet
Table 1:
[1]
[2]
Table 2:
Table 3:
Table 4:
[1]
Symbol
h
C
f
G
NF
Pin
1
2
3
4
Type number
BFG424F
Type number
BFG424F
T
FE
CBS
p(max)
T
G
Figure
* = p: made in Hong Kong.
sp
p(max)
is the temperature at the soldering point of the emitter pins.
8.
Parameter
DC current gain
collector-base
capacitance
transition frequency
maximum power gain
noise figure
is the maximum power gain, if K > 1. If K < 1 then G
Quick reference data
Pinning
Ordering information
Marking
Description
emitter
base
emitter
collector
Package
Name
-
Rev. 01 — 21 March 2006
Description
plastic surface mounted flat pack package; reverse
pinning; 4 leads
…continued
Conditions
I
T
V
I
f = 2 GHz; T
I
f = 2 GHz; T
I
f = 2 GHz;
C
C
C
C
j
CB
= 25 C
= 25 mA; V
= 25 mA; V
= 25 mA; V
= 2 mA; V
= 2 V; f = 1 MHz
S
amb
amb
CE
Marking code
NE*
CE
CE
CE
=
= 2 V;
= 25 C
= 25 C
= 2 V;
= 2 V;
= 2 V;
Simplified outline
opt
p(max)
NPN 25 GHz wideband transistor
3
2
= Maximum Stable Gain (MSG), see
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
1
[2]
4
Min
50
-
-
-
-
Symbol
BFG424F
Typ
80
102
25
23
1.2
2
Max
120
-
-
-
-
mbb159
Version
SOT343F
1, 3
4
Unit
fF
GHz
dB
dB
2 of 13