AT-41532-TR1G Avago Technologies US Inc., AT-41532-TR1G Datasheet - Page 7

• Manufacturer Part Number: AT-41532-TR1G
• Description: IC TRANS NPN GP BIPOLAR SOT-323
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41532-TR1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Noise Figure (db Typ @ F): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
• Gain: 9dB ~ 15.5dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 10GHz
• Power Dissipation Pd: 225mW
• Dc Collector Current: 50mA
• Dc Current Gain Hfe: 150
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1569-2

AT-41532 Typical Scattering Parameters,
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
7
Freq.
GHz
0.5
0.75
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
1 – |S
2*|S
S
S
11
21
12
21
|
12
2
S
Mag
0.243
0.199
0.184
0.186
0.199
0.232
0.275
0.334
0.399
0.462
0.521
0.566
0.609
0.678
0.722
| /|S
(k ±
11
– |S
| |S
12
21
√
22
|
|
k
|
2
2
–1)
+ |D|
Ang
-122
-149
-169
161
139
107
79
56
41
27
14
-2
-18
-28
-39
2
; D = S
11
dB
18.39
15.19
12.88
9.64
7.44
4.61
2.84
1.60
0.66
-0.02
-0.67
-1.26
-1.88
-2.97
-3.38
S
22
Common Emitter, Z
– S
12
S
S
Mag
8.310
5.751
4.408
3.034
2.354
1.700
1.387
1.202
1.079
0.997
0.926
0.865
0.805
0.711
0.678
21
21
Ang
97
85
76
62
49
27
6
-12
-29
-45
-60
-75
-90
-101
-116
O
= 50 Ω, V
dB
-26.90
-23.99
-21.74
-18.35
-15.79
-11.93
-9.00
-6.66
-4.79
-3.30
-2.34
-1.89
-1.92
-2.32
-3.02
CE
= 2.7 V, I
S
Mag
0.045
0.063
0.082
0.121
0.162
0.253
0.355
0.465
0.576
0.684
0.764
0.805
0.802
0.766
0.706
12
C
= 10 mA
25
20
15
10
5
0
0
Figure 12. Gain vs. Frequency at 2.7 V, 10 mA.
Note: dB(|S
dB(S|2,1|)
Ang
68
69
69
67
63
52
39
24
7
-12
-32
-52
-72
-91
-106
gmax
1
k
FREQUENCY (GHz)
2
21
|) = 20 * log(|S
S
Mag
0.586
0.552
0.536
0.520
0.510
0.491
0.467
0.424
0.349
0.261
0.251
0.328
0.422
0.485
0.620
3
22
4
21
5
|)
Ang
-21
-21
-23
-28
-35
-52
-72
-95
-125
-167
134
88
56
29
3
6
1.25
1
0.75
0.5
0.25
0