AT-41532-TR1G Avago Technologies US Inc., AT-41532-TR1G Datasheet - Page 5

• Manufacturer Part Number: AT-41532-TR1G
• Description: IC TRANS NPN GP BIPOLAR SOT-323
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41532-TR1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Noise Figure (db Typ @ F): 1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
• Gain: 9dB ~ 15.5dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 10GHz
• Power Dissipation Pd: 225mW
• Dc Collector Current: 50mA
• Dc Current Gain Hfe: 150
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1569-2

AT-32032 Typical Scattering Parameters,
AT-32032 Typical Noise Parameters,
Common Emitter, Z
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
MSG = |S
k =
5
Freq.
GHz
0.5
0.75
1.0
1.5
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
Freq.
GHz
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1 – |S
2*|S
S
S
11
21
12
21
|
12
2
S
Mag
0.647
0.532
0.455
0.394
0.382
0.397
0.434
0.474
0.497
0.501
0.512
0.532
0.569
0.643
0.687
| /|S
(k ±
11
– |S
| |S
F
dB
1.2
1.6
1.7
1.9
2.2
2.5
2.9
min
12
21
√
22
|
|
k
|
2
2
O
–1)
+ |D|
= 50 Ω, V
Ang
-82
-111
-134
-171
160
116
80
50
30
15
4
-9
-22
-32
-40
2
; D = S
Γ
Mag
0.35
0.48
0.51
0.60
0.65
0.70
0.74
opt
CE
= 2.7 V, I
11
dB
13.45
11.34
9.54
6.70
4.64
1.87
0.03
-1.20
-1.81
-1.88
-1.89
-1.99
-2.31
-2.37
-3.51
S
22
Common Emitter, Z
– S
Ang
100
-179
-165
-136
-112
-91
-74
C
12
= 2 mA
S
S
Mag
4.702
3.691
3.000
2.162
1.707
1.240
1.004
0.871
0.812
0.805
0.804
0.796
0.767
0.762
0.668
21
21
R
ohms
8.7
3.3
3.7
8.9
21.0
42.0
72.0
n
Ang
119
101
88
68
51
26
5
-10
-23
-36
-51
-67
-83
-97
-112
O
= 50 Ω, V
dB
-23.97
-22.60
-21.87
-20.48
-18.50
-13.56
-9.26
-6.05
-3.84
-2.40
-1.73
-1.61
-1.86
-2.41
-3.10
G
dB
12.9
9.7
9.1
8.0
6.9
5.9
5.1
assoc
CE
= 2.7 V, I
S
Mag
0.063
0.074
0.081
0.095
0.119
0.210
0.344
0.498
0.643
0.759
0.819
0.831
0.808
0.758
0.700
12
C
= 2 mA
20
16
12
-4
8
4
0
0
Figure 10. Gain vs. Frequency at 2.7 V, 2 mA.
Note: dB(|S
Ang
52
46
46
52
59
61
50
32
11
-12
-34
-55
-74
-93
-107
1
FREQUENCY (GHz)
2
21
|) = 20 * log(|S
S
Mag
0.808
0.737
0.696
0.658
0.643
0.627
0.604
0.556
0.470
0.377
0.361
0.411
0.476
0.562
0.639
3
22
dB(S|2,1|)
4
gmax
k
21
5
|)
Ang
-21
-24
-27
-33
-40
-59
-81
-108
-142
174
123
82
52
27
1
6
1.2
1
0.8
0.6
0.4
0.2
0