BFT25A,215 NXP Semiconductors, BFT25A,215 Datasheet - Page 8

• Manufacturer Part Number: BFT25A,215
• Description: TRANS NPN 5V 5GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFT25A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 0.5mA @ 1V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.0065 A
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 5V
• Collector-base Voltage: 8V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 6.5mA
• Dc Current Gain (min): 50
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1992-2; 934008580215; BFT25A T/R

Philips Semiconductors
9397 750 13399
Product data sheet
Table 10:
f (MHz)
2000
Fig 13. Noise circle figure.
See
Z
Average gain parameter: MSG = 7.7 dB.
o
Noise parameters
= 50 .
Table
V
1
CE
10;
(V)
j
j
0
0.2
0.2
Rev. 04 — 6 July 2004
I
1
pot. unst.
region
C
0.5
0.5
(mA)
0.2
7.7 dB
5 dB
MSG
7 dB
0.5
F
2.4
min
(dB)
1
1
1
6 dB
(mag)
0.72
2
opt
F
stability
circle
min
4 dB
NPN 5 GHz wideband transistor
3 dB
= 2.4 dB
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5
opt
2
2
10
(ang)
26
mcd110
5
5
10
10
BFT25A
R
1.7
n
/50
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