BFT25A,215 NXP Semiconductors, BFT25A,215 Datasheet - Page 2

• Manufacturer Part Number: BFT25A,215
• Description: TRANS NPN 5V 5GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFT25A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 2dB @ 1GHz
• Power - Max: 32mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 50 @ 0.5mA @ 1V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.0065 A
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 5V
• Collector-base Voltage: 8V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 6.5mA
• Dc Current Gain (min): 50
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1992-2; 934008580215; BFT25A T/R

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
9397 750 13399
Product data sheet
Table 2:
Table 3:
Table 4:
[1]
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Pin
Code: V10
1
2
3
Type number
BFT25A
Type number
BFT25A
Symbol
V
V
V
I
P
T
T
C
stg
j
CBO
CEO
EBO
tot
* = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
T
s
is the temperature at the soldering point of the collector tab.
Discrete pinning
Ordering information
Marking
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
Description
base
emitter
collector
Package
Name
-
Rev. 04 — 6 July 2004
Description
plastic surface mounted package; 3 leads
Conditions
open emitter
open base
open collector
up to T
Marking code
34*
s
= 165 C
Simplified outline
1
NPN 5 GHz wideband transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
[1]
3
SOT23
Min
-
-
-
-
-
-
65
2
Symbol
Max
8
5
2
6.5
32
+150
175
BFT25A
1
sym021
Unit
V
V
V
mA
mW
Version
SOT23
3
2
C
C
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