2SC4713KT146S Rohm Semiconductor, 2SC4713KT146S Datasheet - Page 2

• Manufacturer Part Number: 2SC4713KT146S
• Description: TRANS NPN 6V 50MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of 2SC4713KT146S

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 800MHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 5mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 6V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 50mA
• Transistor Case Style: SC-59
• No. Of Pins: 3
• Svhc: No SVHC (18-Jun-2010)
• Dc: RoHS Compliant
• Dc Current Gain Hfe: 180
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SC4713KT146S; 2SC4713KT146STR

Electrical characteristic curves
○
2SC4774 / 2SC4713K
c
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2009 ROHM Co., Ltd. All rights reserved.
10
8
6
4
2
0
0
Ta = 25°C
COLLECTOR TO EMITTER VOLTAGE : V
0.5
0.2
20
10
1000
Fig.1
Fig.4
5
2
500
200
100
1
0.1
Fig.7
50
20
10
COLLECTOR TO BASE VOLTAGE : V
0.1
0.2
1
Grounded emitter output
characteristics ( )
DC current gain vs. collector current
0.2
Collector output capacitance
vs. voltage
COLLECTOR CURRENT : I
0.5
2
0.5
1
1
2
3
2
5
4
5
I
B
= 0 μ A
10
Ta=25°C
f=1MHz
CE
C
10
20
Ta=25°C
V
(mA)
(V)
CE
CB
20
5
=5V
(V)
50
50
0.5
0.2
20
10
1000
5
2
1
500
200
100
0.1
50
40
30
20
10
50
20
10
COLLECTOR TO BASE VOLTAGE : V
0
5
0
0.1
Fig.5
Fig.8 Back capacitance voltage
COLLECTOR TO EMITTER VOLTAGE : V
Ta = 25°C
0.2
Fig.2
0.2
COLLECTOR CURRENT : I
0.1
voltage vs. collector current
Collector-emitter saturation
0.5
characteristics (
Grounded emitter output
0.5
2/2
1
0.2
1
2
2
0.3
5
5
10
Ta=25°C
f=1MHz
C
0.4
)
10
20
Ta=25°C
I
(mA)
I
C
B
/I
CB
20
= 0mA
B
=10
(V)
CE
50
(V)
0.5
50
50
40
30
20
10
2000
1000
500
200
100
0
Fig.3
50
20
50
20
10
0
5
2
1
0.1
0.1
Fig.6
Fig.9
BASE TO EMITTER VOLTAGE : V
0.2
0.2
Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
0.4
Gain bandwidth product vs.
collector current
0.5
BASS CURRENT : I
base current
Output-on resistance vs.
0.5
2009.12 - Rev.C
0.8
1
1
2
Data Sheet
2
1.2
5
5
B
Ta=25°C
υi=100mVrms
R
f=500kHz
(mA)
L
10
1.6
=1kΩ
V
C
10
CE
Ta=25°C
V
BE
(mA)
= 5V
CE
20
20
(V)
=5V
2.0
50
50