2SC4713KT146S Rohm Semiconductor, 2SC4713KT146S Datasheet
2SC4713KT146S
Manufacturer Part Number
2SC4713KT146S
Description
TRANS NPN 6V 50MA SOT-346
Manufacturer
Rohm Semiconductor
Datasheet
1.2SC4774T106S.pdf
(3 pages)
Specifications of 2SC4713KT146S
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
800MHz
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 5mA, 5V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
6V
Power Dissipation Pd
200mW
Dc Collector Current
50mA
Transistor Case Style
SC-59
No. Of Pins
3
Svhc
No SVHC (18-Jun-2010)
Dc
RoHS Compliant
Dc Current Gain Hfe
180
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SC4713KT146S
2SC4713KT146STR
2SC4713KT146STR
High frequency amplifier transistor,
RF switching (6V, 50mA)
Features
1) Very low output-on resistance (Ron).
2) Low capacitance.
Absolute maximum ratings (Ta=25C)
Packaging specifications and h
Electrical characteristics (Ta=25C)
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
○
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
c
www.rohm.com
Denot es h
Basic ordering unit (pieces)
2SC4774 / 2SC4713K
2009 ROHM Co., Ltd. All rights reserved.
FE
Package
Marking
Parameter
Type
Code
h
Parameter
FE
2SC4774
UMT3
BM
T106
3000
Symbol
S
V
V
V
Tstg
P
∗
CBO
CEO
EBO
I
Tj
Symbol
C
V
BV
BV
BV
C
I
I
Cob
Ron
CE(sat)
CBO
EBO
h
f
CBO
CEO
FE
T
EBO
FE
−55 to +150
2SC4713K
Min.
Limits
180
300
SMT3
12
BM
T146
3000
150
6
3
−
−
−
−
−
0.2
12
50
6
3
S
∗
Typ.
800
−
−
−
−
−
−
−
1
2
Max.
560
0.5
0.5
0.3
1.7
Unit
−
−
−
−
−
mA
°C
°C
W
V
V
V
MHz
Unit
μA
μA
pF
Ω
V
V
V
V
−
1/2
I
I
I
V
V
I
V
V
V
I
C
C
E
C
B
CB
EB
CE
CE
CB
=10μA
=1mA
=10μA
/I
=3mA, V
B
=10V
=2V
/I
=5V, I
=10V, I
=10mA/1mA
C
=5V/5mA
E
I
= −10mA, f=200MHz
E
=100mVrms, f=500kHz
=0A, f=1MHz
Conditions
Dimensions (Unit : mm)
2SC4774
ROHM : UMT3
EIAJ : SC-70
2SC4713K
ROHM : SMT3
EIAJ : SC-59
0.65
( 3 )
( 2 )
2.0
1.3
0.95 0.95
( 3 )
( 2 )
0.65
1.9
2.9
0.3
( 1 )
0.4
( 1 )
Each lead has same dimensions
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
0.2
(1) Emitter
(2) Base
(3) Collector
2009.12 - Rev.C
0.15
0.9
0.7
0.15
1.1
0.8
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2SC4713KT146S Summary of contents
Page 1
High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 1) Very low output-on resistance (Ron). 2) Low capacitance. Absolute maximum ratings (Ta=25C) Parameter Symbol Collector-base voltage V CBO Collector-emitter voltage V CEO Emitter-base voltage V EBO Collector ...
Page 2
Ta = 25° μ COLLECTOR TO EMITTER VOLTAGE : V (V) CE Grounded emitter output Fig.1 characteristics ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...