BF 5020R E6327 Infineon Technologies, BF 5020R E6327 Datasheet - Page 4

• Manufacturer Part Number: BF 5020R E6327
• Description: MOSFET N-CH 8V 25MA SOT143-4
• Manufacturer: Infineon Technologies

Specifications of BF 5020R E6327

• Package / Case: SOT-143R
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 26dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.2dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 32@5VdB
• Noise Figure (max): 1.2(Typ)dB
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.034S
• Input Capacitance (typ)@vds: 2.4@5V@Gate 1pF
• Output Capacitance (typ)@vds: 1@5VpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: SP000474406

Total power dissipation P
BF5020W
Output characteristics I
mA
mA
220
180
160
140
120
100
80
60
40
20
20
16
14
12
10
0
8
6
4
2
0
0
0
15
2
30
45
4
60
75
6
D
90 105 120 °C
= ƒ(V
tot
8
= ƒ(T
DS
V
S
)
1.5V
1.4V
1.3V
1.2V
1.1V
)
T
V
S
DS
150
12
4
Total power dissipation P
BF5020, BF5020R
Gate 1 current I
V
V
DS
G2S
mW
220
180
160
140
120
100
180
µA
140
120
100
= 5V
80
60
40
20
80
60
40
20
= Parameter
0
0
0
0
15
0.5
30
4V
3.5V
3V
2.5V
2V
G1
45
1
= ƒ(V
60
1.5
75
G1S
90 105 120 °C
tot
)
2
= ƒ(T
BF5020...
2009-10-01
V
S
)
T
V
S
G1S
150
3