BF 5020R E6327 Infineon Technologies, BF 5020R E6327 Datasheet - Page 2

• Manufacturer Part Number: BF 5020R E6327
• Description: MOSFET N-CH 8V 25MA SOT143-4
• Manufacturer: Infineon Technologies

Specifications of BF 5020R E6327

• Package / Case: SOT-143R
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 26dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.2dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 32@5VdB
• Noise Figure (max): 1.2(Typ)dB
• Package Type: SOT-143R
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.034S
• Input Capacitance (typ)@vds: 2.4@5V@Gate 1pF
• Output Capacitance (typ)@vds: 1@5VpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: SP000474406

Thermal Resistance
Parameter
Channel - soldering point
BF5020, BF5020R
BF5020W
Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+I
Gate2-source breakdown voltage
+I
Gate1-source leakage current
V
Gate2-source leakage current
V
Drain current
V
Drain-source current
V
Gate1-source pinch-off voltage
V
Gate2-source pinch-off voltage
V
1
D
For calculation of R
G1S
G2S
DS
DS
DS
DS
G1S
G2S
= 20 µA, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, I
= 6 V, V
= 6 V, V
= 10 mA, V
= 10 mA, V
D
G1S
G2S
G2S
G1S
G2S
G1S
= 20 µA, V
thJA
= 0 , V
= 4 V, R
= 4 V, I
= 0 , V
G2S
G1S
= 0 , V
= 0 , V
please refer to Application Note Thermal Resistance
= 0 , V
= 0 , V
G2S
G2S
D
G1S
DS
DS
1)
G1
= 20 µA
= 0
= 0
= 4 V
DS
DS
= 120 kΩ
= 0
= 2 V
A
= 0
= 0
= 25°C, unless otherwise specified
2
Symbol
V
+V
+V
+I
+I
I
I
V
V
Symbol
R
DSS
DSX
(BR)DS
G1S(p)
G2S(p)
thchs
G1SS
G2SS
(BR)G1SS
(BR)G2SS
min.
12
6
6
-
-
-
-
-
-
Values
Value
≤ 370
≤ 280
typ.
0.7
0.7
14
-
-
-
-
-
-
max.
100
15
15
50
50
BF5020...
2009-10-01
-
-
-
-
Unit
V
nA
mA
V
Unit
K/W