VRF151 Microsemi Power Products Group, VRF151 Datasheet - Page 3

• Manufacturer Part Number: VRF151
• Description: MOSFET RF PWR N-CH 50V 150W M174
• Manufacturer: Microsemi Power Products Group

Specifications of VRF151

• Transistor Type: N-Channel
• Frequency: 30MHz
• Gain: 22dB
• Voltage - Rated: 170V
• Current Rating: 16A
• Current - Test: 250mA
• Voltage - Test: 50V
• Power - Output: 150W
• Package / Case: M174
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: VRF151MP; VRF151MP

Typical Performance Curves
30 MHz test Circuit
RF
Input
20
25
30
35
40
45
50
55
60
0.5
0.7
0.6
0.4
0.3
0.2
0.1
0
10
0
-5
Vdd=50V, Idq = 250mA,
P
out
Bias
0-12V
Freq=150MHz
, OUTPUT POWER (WATTS PEP)
0.5
0.3
0.9
0.7
0.1
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
0.05
Figure 6. IMD versus P
50
10
C1
100
-4
R3
C5
SINGLE PULSE
C1 -- 470 pF Dipped Mica
C2, C5, C6 - C9 -- 0.1uF SMT
C3 -- 200pF ATC 700C
C4 -- 15pF, ATC 700C
C10 -- 10uF, 100V Electrolytic
C2
OUT
150
RECTANGULAR PULSE DURATION (seconds)
R1
IM5
IM3
R2
10
C6
200
-3
DUT
C7
T2
C3
L1
10
250
200
150
100
-2
50
0
0
L1 - VK200-4B
L2 -- 2 Ferrite beads, 2.0 uH
R1, R2 -- 51 , 1 W Carbon
R3 -- 3.3 , 1 W Carbon
T1 -- 9:1 Transformer
T2 -- 1:9 Transformer
C8
C4
Vdd=50V, Idq = 250mA,
Freq=150MHz
5
P
L2
out
, INPUT POWER (WATTS PEP)
Note:
Figure 7. P
Peak T J = P DM x Z θJC + T C
10
Duty Factor D =
10
C9
t
1
= Pulse Duration
t 1
15
+
OUT
C10
t 2
versus P
RF
Output
+ 50VDC
20
t 1
/
t 2
Vdd=40V
Vdd=50V
IN
25
1.0
30
VRF151