VRF151 Microsemi Power Products Group, VRF151 Datasheet

MOSFET RF PWR N-CH 50V 150W M174

VRF151

Manufacturer Part Number
VRF151
Description
MOSFET RF PWR N-CH 50V 150W M174
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of VRF151

Transistor Type
N-Channel
Frequency
30MHz
Gain
22dB
Voltage - Rated
170V
Current Rating
16A
Current - Test
250mA
Voltage - Test
50V
Power - Output
150W
Package / Case
M174
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
VRF151MP
VRF151MP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VRF151
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Part Number:
VRF151G
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Part Number:
VRF151MP
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Maximum Ratings
The VRF151 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
FEATURES
• Improved Ruggedness V
• 150W with 22dB Typical Gain @ 30MHz, 50V
• 150W with 14dB Typical Gain @ 175MHz, 50V
• Excellent Stability & Low IMD
• Common Source Confi guration
Static Electrical Characteristics
Thermal Characteristics
Symbol
Symbol
Symbol
V
RF POWER VERTICAL MOSFET
V
V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
R
(BR)DSS
I
V
T
DS(ON)
I
GS(TH)
V
DSS
GSS
g
P
T
I
θ JC
STG
DSS
fs
D
GS
D
J
Parameter
Drain-Source Breakdown Voltage (V
On State Drain Voltage (I
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Characteristic
Junction to Case Thermal Resistance
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Gate-Source Voltage
Total Device dissipation @ T
Storage Temperature Range
Operating Junction Temperature
(BR)DSS
= 170V
D(ON)
DS
Microsemi Website - http://www.microsemi.com
= 10V, I
C
= 10A, V
DS
= 25°C
C
= 10V, I
= 25°C
DS
DS
= ±20V, V
GS
D
= 100V, V
GS
= 100mA)
= 0V, I
• 30:1 Load VSWR Capability at Specifi ed Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• High Voltage Replacement for MRF151
D
• RoHS Compliant
= 10V)
= 5A)
D
DS
= 100mA)
GS
= 0V)
= 0V)
All Ratings: T
C
=25°C unless otherwise specifi ed
Min
170
Min
5.0
2.9
-65 to 150
VRF151
Typ
170
±40
300
200
180
2.0
Typ
3.6
16
50V, 150W, 175MHz
M174
Max
Max
0.60
3.0
1.0
4.4
VRF151
1
mhos
°C/W
Unit
Unit
Unit
mA
μA
°C
W
V
V
V
V
A

Related parts for VRF151

VRF151 Summary of contents

Page 1

... RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor de- signed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V = 170V (BR)DSS • 150W with 22dB Typical Gain @ 30MHz, 50V • ...

Page 2

... Max 20 -50 -75 250μs PULSE TEST<0.5 % DUTY CYCLE T = -55° 25° 125° DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 2, Transfer Characteristics Pdmax I DMax R ds(on) DC line = T 125° 75° 100 250 V , DRAIN-TO-SOURCE VOLTAGE (V) DS FIGURE 4, Forward Safe Operating Area VRF151 Unit pF Unit dB % dBc Unit dB ...

Page 3

... C10 -- 10uF, 100V Electrolytic Note Pulse Duration Duty Factor D = Peak θ 1.0 Vdd=50V, Idq = 250mA, Vdd=50V Freq=150MHz Vdd=40V INPUT POWER (WATTS PEP) out Figure 7. P versus P OUT IN + 50VDC + C10 RF Output VK200- Ferrite beads, 2 Carbon Carbon T1 -- 9:1 Transformer T2 -- 1:9 Transformer VRF151 ...

Page 4

... C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 0.084 0.110 2.14 2. 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 K 0.435 11.0 M 45° NOM 45° NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54 VRF151 ...

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