BLF6G20-40,112 NXP Semiconductors, BLF6G20-40,112 Datasheet - Page 3

• Manufacturer Part Number: BLF6G20-40,112
• Description: TRANSISTOR PWR LDMOS SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-40,112

• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 18.8dB
• Voltage - Rated: 65V
• Current Rating: 13A
• Current - Test: 360mA
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: SOT-608A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060891112

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G20-40_1
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G20-40 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
V
I
I
I
g
R
Symbol
G
ACPR
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
DS(on)
p
= 25 C per section; unless otherwise specified.
= 360 mA; P
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Parameter
power gain
drain efficiency
adjacent channel power ratio
Characteristics
Application information
L
= 40 W (CW); f = 1880 MHz.
DS
= 28 V; I
Rev. 01 — 19 January 2009
1
= 1802.5 MHz; f
Dq
= 360 mA; T
Conditions
V
V
V
V
V
V
V
V
I
D
2
GS
DS
DS
GS
GS
DS
GS
DS
GS
= 2.5 A
= 1807.5 MHz; f
case
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
Conditions
P
P
P
GS(th)
GS(th)
L(AV)
L(AV)
L(AV)
= 25 C; unless otherwise specified; in a
D
DS
D
D
D
= 2.5 W
= 2.5 W
= 2.5 W
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 72 mA
= 300 mA
= 3.6 A
= 28 V
= 0 V
3
= 1872.5 MHz; f
Power LDMOS transistor
Min
17.5
13
-
BLF6G20-40
Min
65
1.4
1.70
-
-
-
-
-
DS
Typ
18.8
15
= 28 V;
Typ
-
1.9
2.30
-
12.5
-
5
0.2
© NXP B.V. 2009. All rights reserved.
46
4
= 1877.5 MHz;
Max
-
-
Max
-
2.4
2.79
1.5
-
150
-
-
42
3 of 11
Unit
dB
%
dBc
Unit
V
V
V
A
nA
S
A