BLF6G20-45,112 NXP Semiconductors, BLF6G20-45,112 Datasheet - Page 4

• Manufacturer Part Number: BLF6G20-45,112
• Description: TRANSISTOR BASESTATION SOT-608A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-45,112

• Package / Case: SOT-608A
• Transistor Type: LDMOS
• Frequency: 1.8GHz
• Gain: 19.2dB
• Voltage - Rated: 65V
• Current Rating: 13A
• Current - Test: 360mA
• Voltage - Test: 28V
• Power - Output: 2.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060065112; BLF6G20-45; BLF6G20-45

NXP Semiconductors
BLF6G20-45_BLF6G20S-45_2
Product data sheet
Fig 1.
Fig 2.
(dB)
G
p
21
19
17
15
0
V
One-tone CW power gain and drain efficiency as functions of load power; typical values
V
MHz.
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
G
D
p
5
Dq
Dq
= 360 mA; f = 1842 MHz.
= 360 mA; f
10
15
1
= 1843 MHz; f
(dB)
G
p
22
20
18
16
14
12
0
20
P
001aah546
L(PEP)
G
D
p
2
(W)
10
Rev. 02 — 25 August 2008
= 1843.1
25
60
40
20
0
(%)
D
20
BLF6G20-45; BLF6G20S-45
Fig 3.
30
(dBc)
IMD
20
40
60
80
0
V
MHz.
Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
40
DS
001aah545
P
L
= 28 V; I
(W)
5
50
60
50
40
30
20
10
Dq
(%)
D
= 360 mA; f
10
IMD3
IMD5
IMD7
Power LDMOS transistor
15
1
= 1843 MHz; f
© NXP B.V. 2008. All rights reserved.
20
P
001aah547
L(PEP)
2
(W)
25
= 1843.1
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