BLF6G10-45,112 NXP Semiconductors, BLF6G10-45,112 Datasheet - Page 100
![TRANS LDMOS 1GHZ SOT608A](/photos/5/64/56476/sot-608a_sot608a_pkg_sml.jpg)
BLF6G10-45,112
Manufacturer Part Number
BLF6G10-45,112
Description
TRANS LDMOS 1GHZ SOT608A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G20LS-140118.pdf
(100 pages)
Specifications of BLF6G10-45,112
Package / Case
SOT-608A
Transistor Type
LDMOS
Frequency
922.5MHz
Gain
22.5dB
Voltage - Rated
65V
Current Rating
13A
Current - Test
350mA
Voltage - Test
28V
Power - Output
1W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
- 0.5 V, 13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060888112
BLF6G10-45
BLF6G10-45
BLF6G10-45
BLF6G10-45
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www.nxp.com
© 2007 NXP N.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written
consent of the copyright owner. The information presented in this document does not form
part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license under patent or other industrial or
intellectual property rights.
Date of release: January 007
Document order number: 997 750 1504
Printed in the USA
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