BLF6G10-45,112 NXP Semiconductors, BLF6G10-45,112 Datasheet - Page 24
BLF6G10-45,112
Manufacturer Part Number
BLF6G10-45,112
Description
TRANS LDMOS 1GHZ SOT608A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G20LS-140118.pdf
(100 pages)
Specifications of BLF6G10-45,112
Package / Case
SOT-608A
Transistor Type
LDMOS
Frequency
922.5MHz
Gain
22.5dB
Voltage - Rated
65V
Current Rating
13A
Current - Test
350mA
Voltage - Test
28V
Power - Output
1W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
- 0.5 V, 13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060888112
BLF6G10-45
BLF6G10-45
BLF6G10-45
BLF6G10-45
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Wireless connectivity
Wireless connectivity: Wi-Fi (802.11)
Performance comparison: BGW200 vs. BGW211
4
Product
BGW211
BGW200
Frequency bands
Modulations
Data rates
Transmit power (15 dBm)
Receive power
Standard
compliance
802.11g
802.11b
External
components
required
0
3
Design
footprint
(mm
BGW200
2.4 to 2.5 GHz
DBPSK, DQPSK, CCK (DSSS)
1, 2, 5.5, 11 Mbps
731 mW
415 mW
2
150
180
)
Standby
power
consumption
< 2 mW
< 2 mW
Bluetooth
1.1/1.2
coexistence QoS
•
•
•
•
ARM7
processor Integrated memory
•
•
BGW211
2.4 to 2.5 GHz
DBPSK, DQPSK, CCK (DSSS), OFDM
1, 2, 5.5 Mbps (802.11b)
6, 9, 12, 18, 24, 36, 48, 54 Mbps (802.11g)
550 mW (802.11b)
600 mW (802.11g)
300 mW (802.11b)
400 mW (802.11g)
1.25-MB SRAM
256-KB ROM
1.25-MB SRAM
256-KB ROM
Host
interfaces
Optimized
SDIO/SPI
Optimized
SDIO/SPI
SiP package
dimensions (mm)
10 x 15 x 1.3
10 x 15 x 1.3
Pins
68
68
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