BF244C Fairchild Semiconductor, BF244C Datasheet

BF244C

Manufacturer Part Number

BF244C

Description

IC AMP RF N-CH 30V TO-92

Manufacturer

Fairchild Semiconductor

Datasheet

1.BF244A.pdf (6 pages)

Specifications of BF244C

Transistor Type

N-Channel JFET

Frequency

100MHz

Voltage - Rated

30V

Current Rating

50mA

Noise Figure

1.5dB

Voltage - Test

15V

Package / Case

TO-92-3 (Standard Body), TO-226

Transistor Polarity

N-Channel

Forward Transconductance Gfs (max / Min)

0.003 S to 0.0065 S

Gate-source Breakdown Voltage

- 30 V

Maximum Drain Gate Voltage

30 V

Continuous Drain Current

50 mA

Drain Current (idss At Vgs=0)

15 mA

Power Dissipation

350 mW

Maximum Operating Temperature

+ 150 C

Configuration

Single

Minimum Operating Temperature

- 55 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Output

Gain

Current - Test

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BF244C

Manufacturer:

FSC

Quantity:

150

Company:

Meier Automation Equipment Co., Limited

Part Number:

BF244C

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Current page: 1 of 6
Download datasheet (79Kb)

1997 Fairchild Semiconductor Corporation

Symbol

stg

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

N-Channel RF Amplifier

Thermal Characteristics

This device is designed for RF amplifier and mixer applications

operating up to 450 MHz, and for analog switching requiring low

capacitance. Sourced from Process 50.

Absolute Maximum Ratings*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Drain-Gate Voltage

Gate-Source Voltage

Drain Current

Forward Gate Current

Storage Temperature Range

Derate above 25 C

BF244A

BF244B

BF244C

Characteristic

TO-92

Parameter

TA = 25°C unless otherwise noted

BF244A / BF244B / BF244C

Max

350

125

357

2.8

-55 to +150

Value

- 30

Units

mW/ C

Units

C/W

Related parts for BF244C

BF244C Summary of contents

Page 1

... Symbol Characteristic P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted BF244A / BF244B / BF244C Value Units -55 to +150 C Max Units 350 mW 2 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Gate-Source Breakdown Voltage (BR)GSS I Gate Reverse Current GSS V Gate-Source Cutoff Voltage GSS(off) V Gate-Source Voltage GS ON CHARACTERISTICS I Zero-Gate Voltage Drain Current DSS SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance y ...

Page 3

Typical Characteristics Transconductance Characteristics - + +125 -2 GATE-SOURCE ...

Page 4

Typical Characteristics Capacitance vs Voltage 0.1 - 1.0 MHz - GATE-SOURCE VOLTAGE( Common ...

Page 5

Common Source Characteristics Output Admittance 10) OSS g OSS V = 15V (CS) 100 200 300 500 f -- FREQUENCY (MHz) Forward Transadmittance fss -b fss ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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