BLF248,112 NXP Semiconductors, BLF248,112 Datasheet - Page 7

• Manufacturer Part Number: BLF248,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF248,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 225MHz
• Gain: 11.5dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Voltage - Test: 28V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2389; 934006630112; BLF248; BLF248

Philips Semiconductors
2003 Sep 02
handbook, halfpage
VHF push-pull power MOS transistor
Class-AB operation; V
R
section); f = 225 MHz.
Fig.9
GS
(dB)
G p
= 536
20
15
10
5
0
0
Power gain and efficiency as functions of
load power; typical values.
(per section); Z
100
DS
= 28 V; I
L
= 0.79
200
DQ
G p
D
= 2
j0.11
250 mA;
300
T h = 25 C
(per
P L (W)
25 C
70 C
70 C
MGP209
400
80
60
40
20
0
(%)
D
7
handbook, halfpage
Class-AB operation; V
R
section); f = 225 MHz.
Fig.10 Load power as a function of input power;
GS
(W)
P L
400
300
200
100
= 536
0
0
typical values.
(per section); Z
10
DS
= 28 V; I
T h = 25 C
L
= 0.79
70 C
20
DQ
= 2
j0.11
250 mA;
Product specification
30
(per
P IN (W)
BLF248
MGP210
40