BLF248,112 NXP Semiconductors, BLF248,112 Datasheet - Page 4

• Manufacturer Part Number: BLF248,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF248,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 225MHz
• Gain: 11.5dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Voltage - Test: 28V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2389; 934006630112; BLF248; BLF248

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Sep 02
Per section
V
I
I
V
g
g
R
I
C
C
C
j
DSS
GSS
DSX
GS
fs
fs1
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
VHF push-pull power MOS transistor
GS
SYMBOL
/g
group indicator
GROUP
fs2
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
both transistor sections
forward transconductance
forward transconductance ratio of
both transistor sections
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETER
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
I
I
I
I
I
V
V
V
V
D
D
D
D
D
GS
GS
GS
GS
GS
GS
GS
= 100 mA; V
= 100 mA; V
= 8 A; V
= 8 A; V
= 8 A; V
4
= 0; I
= 0; V
= 20 V; V
= 10 V; V
= 0; V
= 0; V
= 0; V
D
CONDITIONS
GROUP
DS
DS
DS
GS
DS
DS
DS
= 100 mA
W
= 28 V
= 10 V
= 10 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
O
Q
R
U
= 10 V
P
S
T
V
X
Y
Z
DS
DS
DS
DS
= 10 V
= 10 V
= 10 V
= 0
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
65
2
5
0.9
MIN.
LIMITS
(V)
Product specification
7.5
0.1
37
500
360
46
TYP. MAX. UNIT
BLF248
5
1
4.5
100
1.1
0.15
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
mV
S
A
pF
pF
pF
A