BLF647,112 NXP Semiconductors, BLF647,112 Datasheet - Page 3

• Manufacturer Part Number: BLF647,112
• Description: TRANSISTOR RF DMOS SOT540A
• Manufacturer: NXP Semiconductors

Specifications of BLF647,112

• Package / Case: SOT540A
• Transistor Type: LDMOS
• Frequency: 600MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Voltage - Test: 28V
• Power - Output: 120W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.16 Ohm (Typ) @ 9 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 18 A
• Power Dissipation: 290000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2419; 934056498112; BLF647; BLF647

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
Note
1. Capacitance values of the die only.
2001 Nov 27
handbook, halfpage
R
R
V
V
I
I
I
g
R
C
C
C
j
DSS
DSX
GSS
fs
SYMBOL
SYMBOL
(BR)DSS
GSth
th j-mb
th mb-h
= 25 C per section unless otherwise specified.
DSon
iss
oss
rss
UHF power LDMOS transistor
V
Fig.2
C oss
(pF)
GS
100
= 0; f = 1 MHz; T
80
60
40
20
0
0
Output capacitance as a function of
drain-source voltage; typical values per
section.
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
10
j
= 25 C.
20
PARAMETER
30
PARAMETER
40
V DS (V)
MGW546
50
V
V
V
V
V
V
V
V
note 1
V
V
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
= 0; I
= 20 V; I
= 0; V
= V
= 15 V; V
= 20 V; I
= V
= 0; V
= 0; V
= 0; V
3
GSth
GSth
CONDITIONS
D
DS
DS
DS
DS
= 1.4 mA
+ 9 V; V
+ 9 V; I
D
D
= 28 V
= 28 V; f = 1 MHz;
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 140 mA
= 4 A
DS
T
mb
= 0
D
DS
= 25 C; P
= 4 A
CONDITIONS
= 10 V
tot
= 290 W
65
4
18
MIN.
4
160
80
43
6
TYP.
0.6
0.2
Product specification
VALUE
5.5
1.2
25
MAX.
BLF647
K/W
K/W
UNIT
V
V
A
nA
S
m
pF
pF
pF
UNIT
A