BLF647,112 NXP Semiconductors, BLF647,112 Datasheet - Page 2

• Manufacturer Part Number: BLF647,112
• Description: TRANSISTOR RF DMOS SOT540A
• Manufacturer: NXP Semiconductors

Specifications of BLF647,112

• Package / Case: SOT540A
• Transistor Type: LDMOS
• Frequency: 600MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Voltage - Test: 28V
• Power - Output: 120W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.16 Ohm (Typ) @ 9 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 18 A
• Power Dissipation: 290000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2419; 934056498112; BLF647; BLF647

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Nov 27
CW, class-AB
2-tone,
class-AB
V
V
I
P
T
T
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
D
OPERATION
SYMBOL
stg
j
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (HF to 800 MHz)
Internal input damping for excellent stability over the
whole frequency range.
Communication transmitter applications in the
HF to 800 MHz frequency range.
DS
GS
tot
UHF power LDMOS transistor
MODE OF
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
f
1
h
= 600; f
= 25 C in a common source test circuit.
PARAMETER
(MHz)
600
f
2
= 600.1
V
(V)
28
28
DS
T
mb
CAUTION
25 C
2
120 (PEP)
CONDITIONS
PINNING - SOT540A
120
(W)
P
L
PIN
1
2
3
4
5
>14.5
>14.5
Top view
(dB)
Fig.1 Simplified outline.
G
drain 1
drain 2
gate 1
gate 2
source, connected to flange
p
3
1
65
MIN.
DESCRIPTION
2
4
>55
>40
(%)
D
Product specification
MBK777
65
18
290
+150
200
15
MAX.
5
BLF647
(dBc)
V
V
A
W
C
C
d
UNIT
im
26