BLF278,112 NXP Semiconductors, BLF278,112 Datasheet - Page 3

• Manufacturer Part Number: BLF278,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Power Gain (typ)@vds: 20(Min)@50V/18@50V/16@50VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 6.2S
• Drain Source Resistance (max): 300@10Vmohm
• Input Capacitance (typ)@vds: 480@50VpF
• Output Capacitance (typ)@vds: 190@50VpF
• Reverse Capacitance (typ): 14@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 80%
• Mounting: Screw
• Mode Of Operation: CW Class-AB/CW Class-B/CW Class-C
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 7
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2412; 933978520112; BLF278; BLF278

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 19
handbook, halfpage
Per transistor section
V
V
I
P
T
T
R
R
D
stg
j
DS
GS
tot
th j-mb
th mb-h
VHF push-pull power MOS transistor
Total device; both sections equally loaded.
(1) Current is this area may be limited by R
(2) T
SYMBOL
SYMBOL
(A)
I D
100
10
mb
1
1
= 25 C.
(1)
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction
to mounting base
thermal resistance from
mounting base to heatsink
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
(2)
DSon
100
.
V
DS
MRA988
(V)
500
T
sections equally loaded
total device; both sections
equally loaded.
total device; both sections
equally loaded.
mb
25 C; total device; both
3
CONDITIONS
CONDITIONS
handbook, halfpage
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
P tot
(W)
500
400
300
200
100
0
0
Fig.3 Power derating curves.
40
(1)
65
MIN.
max. 0.35
max. 0.15
80
VALUE
(2)
125
18
500
150
200
Product Specification
20
120
MAX.
T h ( C)
BLF278
MGE616
UNIT
160
K/W
K/W
V
V
A
W
C
C
UNIT