BLF278,112 NXP Semiconductors, BLF278,112 Datasheet - Page 16

• Manufacturer Part Number: BLF278,112
• Description: TRANSISTOR RF DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278,112

• Package / Case: SOT-262A1
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Power Gain (typ)@vds: 20(Min)@50V/18@50V/16@50VdB
• Frequency (max): 225MHz
• Package Type: CDFM
• Pin Count: 5
• Forward Transconductance (typ): 6.2S
• Drain Source Resistance (max): 300@10Vmohm
• Input Capacitance (typ)@vds: 480@50VpF
• Output Capacitance (typ)@vds: 190@50VpF
• Reverse Capacitance (typ): 14@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 80%
• Mounting: Screw
• Mode Of Operation: CW Class-AB/CW Class-B/CW Class-C
• Number Of Elements: 2
• Power Dissipation (max): 500000mW
• Vswr (max): 7
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2412; 933978520112; BLF278; BLF278

Philips Semiconductors
List of components (see Figs 21 and 22).
2003 Sep 19
C1, C2
C3, C4, C31, C32
C5
C6, C30
C7
C8, C9, C15, C18
C10, C13, C14,
C19, C36
C11, C12
C16, C17
C20
C21
C22, C27, C37,
C38
C23, C26, C35
C24, C25
C28
C29
C33, C34
L1, L3, L22, L24
L2, L23
L4, L5
L6, L7
L8, L9
L10, L11
L12, L13
VHF push-pull power MOS transistor
COMPONENT
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
film dielectric trimmer
film dielectric trimmer
multilayer ceramic chip capacitor;
note 1
MKT film capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor;
note 1
electrolytic capacitor
multilayer ceramic chip capacitor;
note 1
film dielectric trimmer
multilayer ceramic chip capacitor;
note 1
electrolytic capacitor
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
multilayer ceramic chip capacitor;
note 1
stripline; note 2
semi-rigid cable; note 3
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
DESCRIPTION
27 pF, 500 V
3
in parallel, 500 V
4 to 40 pF
2 to 18 pF
100 pF, 500 V
1 F, 63 V
100 nF, 50 V
2
500 V
220 F, 63 V
3
parallel, 500 V
2 to 9 pF
1 nF, 500 V
10 F, 63 V
2
parallel, 500 V
2
1
parallel, 500 V
2
parallel, 500 V
5.6 pF, 500 V
50
50
43
43
43
43
43
16
18 pF
1 nF in parallel,
33 pF in
470 pF in
10 pF +
18 pF in
5.6 pF in
VALUE
length 80 mm
width 4.8 mm
ext. dia. 3.6 mm
outer conductor
length 80 mm
length 24 mm
width 6 mm
length 14.5 mm
width 6 mm
length 4.4 mm
width 6 mm
length 3.2 mm
width 6 mm
length 15 mm
width 6 mm
DIMENSIONS
2222 809 08002
2222 809 09006
2222 371 11105
2222 852 47104
2222 809 09005
Product Specification
CATALOGUE NO.
BLF278