BLF871,112 NXP Semiconductors, BLF871,112 Datasheet - Page 5

• Manufacturer Part Number: BLF871,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF871,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 500mA
• Voltage - Test: 40V
• Power - Output: 100W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.21 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Power Dissipation: 24 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4737; 934062051112

NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
Fig 3.
(dB)
G
p
25
23
21
19
17
0
V
narrowband 860 MHz test circuit.
2-Tone power gain and drain efficiency as
functions of average load power; typical
values
DS
= 40 V; I
7.1.1 CW
7.1.2 2-Tone
7.1 Narrowband RF figures
G
η
D
p
Dq
40
= 0.5 A; measured in a common source
Fig 2.
V
CW power gain and drain efficiency as a function of load power; typical values
80
DS
= 40 V; I
P
L(AV)
001aaj278
(W)
Dq
Rev. 04 — 19 November 2009
(dB)
G
= 0.5 A; measured in a common source narrowband 860 MHz test circuit.
120
p
24
22
20
18
16
80
60
40
20
0
(%)
0
η
D
G
η
Fig 4.
D
p
60
IMD3
(dBc)
(1) Low frequency component
(2) High frequency component
−20
−40
−60
0
0
V
narrowband 860 MHz test circuit.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
DS
= 40 V; I
120
BLF871; BLF871S
Dq
P
40
L
= 0.5 A; measured in a common source
001aaj277
(W)
(1)
(2)
UHF power LDMOS transistor
180
80
60
40
20
0
(%)
η
D
80
P
L(AV)
© NXP B.V. 2010. All rights reserved.
001aaj279
(W)
120
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