BLF542,112 NXP Semiconductors, BLF542,112 Datasheet - Page 8

• Manufacturer Part Number: BLF542,112
• Description: TRANSISTOR RF DMOS SOT171A
• Manufacturer: NXP Semiconductors

Specifications of BLF542,112

• Package / Case: SOT-171A
• Transistor Type: N-Channel
• Frequency: 500MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 1.5A
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 5W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 5 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Quad Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 5W
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (max): 500MHz
• Package Type: CDFM
• Pin Count: 6
• Forward Transconductance (typ): 0.24S
• Drain Source Resistance (max): 5000@15Vmohm
• Input Capacitance (typ)@vds: 14@28VpF
• Output Capacitance (typ)@vds: 9.4@28VpF
• Reverse Capacitance (typ): 1.7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 59%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 20000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2417; 934006660112; BLF542; BLF542

Philips Semiconductors
List of components (see Fig.11)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed circuit board with PTFE fibre-glass dielectric (
2003 Sep 18
C1, C5, C13
C2, C4, C10,
C12
C3, C9
C6
C7
C8
C11
L1
L2
L3
L4, L5
L6
L7
L8
L9
R1
R2
R3
R4
COMPONENT
UHF power MOS transistor
thickness
1
32
inch.
multilayer ceramic chip capacitor; note 1
film dielectric trimmer
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 2
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor; note 1
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
stripline; note 3
8 turns 0.8 mm enamelled copper wire
grade 3B Ferroxcube wideband RF choke
metal film resistor
10 turn potentiometer
metal film resistor
metal film resistor
DESCRIPTION
8
390 pF
2 to 18 pF
39 pF
220 pF
100 nF
63 V, 10 F
10 pF
50
50
50
42
50
50
250 nH
10 k , 0.4 W
50 k
205 k , 0.4 W
10 , 0.4 W
VALUE
11 mm
37 mm
13 mm
3 mm
39 mm
22 mm
length 9 mm
int. dia. 6 mm
leads 2
DIMENSIONS
3 mm
2.5 mm
2.5 mm
2.5 mm
2.5 mm
2.5 mm
5 mm
Product specification
CATALOGUE NO.
2222 852 47104
2222 030 28109
4312 020 36640
2322 151 71003
2322 151 72054
2322 151 71009
r
222 809 05217
= 2.2);
BLF542