BLF542,112 NXP Semiconductors, BLF542,112 Datasheet - Page 6

• Manufacturer Part Number: BLF542,112
• Description: TRANSISTOR RF DMOS SOT171A
• Manufacturer: NXP Semiconductors

Specifications of BLF542,112

• Package / Case: SOT-171A
• Transistor Type: N-Channel
• Frequency: 500MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 1.5A
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 5W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 5 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Quad Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 5W
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (max): 500MHz
• Package Type: CDFM
• Pin Count: 6
• Forward Transconductance (typ): 0.24S
• Drain Source Resistance (max): 5000@15Vmohm
• Input Capacitance (typ)@vds: 14@28VpF
• Output Capacitance (typ)@vds: 9.4@28VpF
• Reverse Capacitance (typ): 1.7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 59%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 20000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2417; 934006660112; BLF542; BLF542

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in CW operation in a common source class-B test circuit.
Ruggedness in class-B operation
The BLF542 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under
the following conditions: V
2003 Sep 18
handbook, halfpage
CW, class-B
mb
UHF power MOS transistor
V
Fig.8
= 25 C unless otherwise specified.
GS
MODE OF OPERATION
(pF)
C rs
= 0; f = 1 MHz.
6
4
2
0
0
Feedback capacitance as a function of
drain-source voltage; typical values.
10
DS
= 28 V; f = 500 MHz at rated output power.
20
(MHz)
500
V DS (V)
f
MBB775
30
V
(V)
28
DS
6
(mA)
I
50
DQ
(W)
P
5
L
typ. 16.5
(dB)
G
13
Product specification
P
BLF542
typ. 59
>50
(%)
D