BF994S,215 NXP Semiconductors, BF994S,215 Datasheet - Page 3

• Manufacturer Part Number: BF994S,215
• Description: MOSFET NCH DUAL GATE 20V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF994S,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Gain: 25dB
• Voltage - Rated: 20V
• Current Rating: 30mA
• Noise Figure: 1dB
• Current - Test: 10mA
• Voltage - Test: 15V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Application: VHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 20V
• Power Gain (typ)@vds: 25@15VdB
• Noise Figure (max): 1(Typ)dB
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.5@15V@Gate 1/1.2@15V@Gate 2pF
• Output Capacitance (typ)@vds: 1@15VpF
• Reverse Capacitance (typ): 0.025@15VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1972-2; 933754970215; BF994S T/R

NXP Semiconductors
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8  10  0.7 mm.
July 1993
handbook, halfpage
V
I
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
D(AV)
G1-S
G2-S
stg
j
DS
tot
N-channel dual-gate MOS-FET
th j-a
(mW)
P tot
200
100
0
0
drain-source voltage
drain current (DC)
average drain current
gate 1-source current
gate 2-source current
total power dissipation
storage temperature range
junction temperature
thermal resistance from junction to ambient
Fig.2 Power derating curve.
PARAMETER
PARAMETER
100
T amb (°C)
MGE792
200
up to T
in free air; note 1
amb
3
CONDITIONS
= 60 C; note 1
CONDITIONS






65

MIN.
VALUE
460
Product specification
20
30
30
10
10
200
+150
150
MAX.
BF994S
UNIT
K/W
V
mA
mA
mA
mA
mW
C
C
UNIT