BF994S,215 NXP Semiconductors, BF994S,215 Datasheet - Page 2

• Manufacturer Part Number: BF994S,215
• Description: MOSFET NCH DUAL GATE 20V SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BF994S,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Gain: 25dB
• Voltage - Rated: 20V
• Current Rating: 30mA
• Noise Figure: 1dB
• Current - Test: 10mA
• Voltage - Test: 15V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Application: VHF
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 20V
• Power Gain (typ)@vds: 25@15VdB
• Noise Figure (max): 1(Typ)dB
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.5@15V@Gate 1/1.2@15V@Gate 2pF
• Output Capacitance (typ)@vds: 1@15VpF
• Reverse Capacitance (typ): 0.025@15VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1972-2; 933754970215; BF994S T/R

NXP Semiconductors
FEATURES
 Protected against excessive input voltage surges by
APPLICATIONS
 VHF applications such as:
PINNING
QUICK REFERENCE DATA
July 1993
V
I
P
T
C
C
F
SYMBOL
D
Y
integrated back-to-back diodes between gates
and source.
– VHF television tuners
– Professional communication equipment.
j
DS
tot
N-channel dual-gate MOS-FET
ig1-s
rs
fs
PIN
1
2
3
4
drain-source voltage
drain current
total power dissipation
junction temperature
transfer admittance
input capacitance at gate 1 f = 1 MHz; I
feedback capacitance
noise figure
SYMBOL
s, b
g
g
d
2
1
PARAMETER
source
drain
gate 2
gate 1
DESCRIPTION
up to T
f = 1 kHz; I
f = 1 MHz; I
f = 200 MHz; G
I
D
= 10 mA; V
amb
D
= 60 C
D
D
= 10 mA; V
= 10 mA; V
= 10 mA; V
DS
S
CONDITIONS
= 15 V; V
= 2 mS; B
2
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
handbook, halfpage
Marking code: MGp.
DS
DS
DS
Fig.1 Simplified outline (SOT143) and symbol.
Top view
G2-S
= 15 V; V
S
= 15 V; V
= 15 V; V
= B
= 4 V
Sopt
4
1
;
G2-S
G2-S
G2-S
= 4 V
3
2
= 4 V 2.5
= 4 V 25




18
1
TYP.
MAM039
Product specification
g 2
g 1
20
30
200
150

3


MAX.
BF994S
V
mA
mW
C
mS
pF
fF
dB
UNIT
s,b
d