PUMH9T/R NXP Semiconductors, PUMH9T/R Datasheet - Page 4

• Manufacturer Part Number: PUMH9T/R
• Description: Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of PUMH9T/R

• Package: 6SOT-363
• Configuration: Dual
• Minimum Dc Current Gain: 100@5mA@5V
• Peak Dc Collector Current: 100 mA
• Maximum Collector Emitter Saturation Voltage: 0.1@0.25mA@5mA V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Processing Temperature: 260 °C

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2004 Apr 14
Per transistor
R
Per device
R
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
th(j-a)
th(j-a)
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
thermal resistance from junction to ambient
thermal resistance from junction to ambient
SOT363
SOT457
SOT666
SOT363
SOT457
SOT666
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
f = 1 MHz
C
CB
CE
CE
EB
CE
CE
CE
CB
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
4
CONDITIONS
C
B
C
C
T
note 1
note 1
notes 1 and 2
T
note 1
note 1
notes 1 and 2
E
B
B
E
= 0.25 mA
= 0 A
= 5 mA
= 100 μA
C
amb
amb
= 0 A
= 0 A
= 0 A; T
= i
= 1 mA
CONDITIONS
e
≤ 25 °C
≤ 25 °C
= 0 A;
j
= 150 °C
PIMH9; PUMH9; PEMH9
−
−
−
−
100
−
−
1.4
7
3.7
−
MIN.
VALUE
625
417
625
416
208
416
−
−
−
−
−
−
0.7
0.8
10
4.7
−
TYP.
Product data sheet
100
1
50
150
−
100
0.5
−
13
5.7
2.5
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT