PUMH9T/R NXP Semiconductors, PUMH9T/R Datasheet - Page 3

• Manufacturer Part Number: PUMH9T/R
• Description: Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of PUMH9T/R

• Package: 6SOT-363
• Configuration: Dual
• Minimum Dc Current Gain: 100@5mA@5V
• Peak Dc Collector Current: 100 mA
• Maximum Collector Emitter Saturation Voltage: 0.1@0.25mA@5mA V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Processing Temperature: 260 °C

NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2004 Apr 14
PEMH9
PIMH9
PUMH9
Per transistor
V
V
V
V
I
I
P
T
T
T
Per device
P
O
CM
SYMBOL
TYPE NUMBER
stg
j
amb
CBO
CEO
EBO
i
tot
tot
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
positive
negative
SOT363
SOT457
SOT666
SOT363
SOT457
SOT666
PARAMETER
NAME
−
−
−
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
open emitter
open base
open collector
T
note 1
note 1
notes 1 and 2
T
note 1
note 1
notes 1 and 2
amb
amb
≤ 25 °C
≤ 25 °C
3
CONDITIONS
DESCRIPTION
PACKAGE
PIMH9; PUMH9; PEMH9
−
−
−
−
−
−
−
−
−
−
−65
−
−65
−
−
−
MIN.
50
50
10
+40
−10
100
100
200
300
200
+150
150
+150
300
600
300
MAX.
Product data sheet
VERSION
SOT666
SOT457
SOT363
V
V
V
V
V
mA
mA
mW
mW
mW
°C
°C
°C
mW
mW
mW
UNIT