BAP51LX,315 NXP Semiconductors, BAP51LX,315 Datasheet - Page 3

• Manufacturer Part Number: BAP51LX,315
• Description: DIODE SILICON PIN SOD-882T
• Manufacturer: NXP Semiconductors

Specifications of BAP51LX,315

• Package / Case: SOD-882
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 60V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
• Resistance @ If, F: 1.5 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 140mW
• Configuration: Single
• Reverse Voltage: 60 V
• Forward Continuous Current: 100 mA
• Frequency Range: UHF, SHF
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.3 pF at 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.5 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 9 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 140 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059353315; BAP51LX T/R; BAP51LX T/R

NXP Semiconductors
Table 6.
T
BAP51LX_1
Product data sheet
Symbol
L
L
L
L
L
amb
L
Fig 1. Diode capacitance as a function of reverse
ins
ins
ins
ins
S
= 25 C unless otherwise specified.
(fF)
C
400
300
200
100
d
0
f = 1 MHz; T
voltage; typical values
0
Characteristics
Parameter
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
4
j
= 25 C.
8
…continued
12
Conditions
see
see
see
see
when switched from I
I
I
I
R
R
F
16
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
= 100 mA; f = 100 MHz
= 6 mA; R
= 3 mA
001aag633
V
Figure
Figure
Figure
Figure
R
(V)
20
Rev. 01 — 26 June 2007
4; I
4; I
4; I
4; I
L
= 100 ; measured at
F
F
F
F
= 0.5 mA;
= 1 mA;
= 10 mA;
= 100 mA;
F
= 10 mA to
Fig 2. Forward resistance as a function of forward
( )
r
10
D
10
10
1
2
1
10
f = 100 MHz; T
current; typical values
1
j
= 25 C.
1
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
0.36
0.36
0.38
0.25
0.26
0.27
0.12
0.14
0.15
0.09
0.10
0.12
0.55
0.4
10
BAP51LX
© NXP B.V. 2007. All rights reserved.
Silicon PIN diode
I
F
(mA)
001aag634
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
2
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
nH
s
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