BAP51LX,315 NXP Semiconductors, BAP51LX,315 Datasheet - Page 2

• Manufacturer Part Number: BAP51LX,315
• Description: DIODE SILICON PIN SOD-882T
• Manufacturer: NXP Semiconductors

Specifications of BAP51LX,315

• Package / Case: SOD-882
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 60V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
• Resistance @ If, F: 1.5 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 140mW
• Configuration: Single
• Reverse Voltage: 60 V
• Forward Continuous Current: 100 mA
• Frequency Range: UHF, SHF
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.3 pF at 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.5 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 9 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 140 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059353315; BAP51LX T/R; BAP51LX T/R

NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 6.
T
BAP51LX_1
Product data sheet
Symbol
V
I
C
r
ISL
R
D
amb
F
d
= 25 C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
diode forward resistance
isolation
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Type number
BAP51LX
Symbol
V
I
P
T
T
Symbol
R
F
stg
j
R
tot
th(j-sp)
Marking
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
Conditions
I
V
see
see
see
F
R
= 50 mA
V
V
V
I
I
I
I
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
F
F
F
F
= 50 V
R
R
R
Figure
Figure
Figure
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0 V
= 1 V
= 5 V
Rev. 01 — 26 June 2007
1; f = 1 MHz;
2; f = 100 MHz;
3; V
R
= 0 V;
Conditions
T
sp
= 90 C
Conditions
Marking code
L2
Min
-
-
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
65
65
Typ
0.95
-
0.30
0.22
0.17
4.9
3.2
1.4
0.9
19
15
13
BAP51LX
Max
60
100
140
+150
+150
Typ
66
© NXP B.V. 2007. All rights reserved.
Silicon PIN diode
Max
1.1
100
-
0.40
0.30
9
6.5
2.5
1.5
-
-
-
Unit
V
mA
mW
Unit
K/W
C
C
Unit
V
nA
pF
pF
pF
dB
dB
dB
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