BAP50-05W,115 NXP Semiconductors, BAP50-05W,115 Datasheet - Page 4

• Manufacturer Part Number: BAP50-05W,115
• Description: DIODE PIN GP 50V 50MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BAP50-05W,115

• Package / Case: SC-70-3, SOT-323-3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.5pF @ 5V, 1MHz
• Resistance @ If, F: 5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 240mW
• Configuration: Dual Common Cathode
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Carrier Life: 1.05 us
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.5 pF @ 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 5 Ohm @ 10 mA
• Maximum Series Resistance @ Minimum If: 40 Ohm @ 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 240 mW
• Forward Current: 50mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SC-70
• Mounting: Surface Mount
• Typical Carrier Life Time: 1.05us
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1920-2; 934056537115; BAP50-05W T/R

NXP Semiconductors
GRAPHICAL DATA
2001 Apr 17
handbook, halfpage
handbook, halfpage
General purpose PIN diode
f = 100 MHz; T
(1) I
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network.
T
Fig.4
Fig.2
s 21
amb
(dB)
10
(Ω)
r D
10
10
−1
−2
−3
−4
−5
F
= 25 C.
10
2
−1
10
0
1
= 10 mA.
3
2
0.5
−1
Insertion loss s
as a function of frequency; typical values.
Forward resistance as a function of
forward current; typical values.
j
= 25 C.
1
(2) I
1
1.5
F
21
= 1 mA.

2
of the diode in on-state
2
(1)
(2)
(3)
10
(3) I
I F (mA)
2.5
f (GHz)
F
MLD605
MLD607
= 0.5 mA.
10
3
2
4
handbook, halfpage
handbook, halfpage
Fig.5
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
s 21
amb
(dB)
(fF)
600
400
200
C d
−10
−15
−20
−25
−5
= 25 C.
2
0
0
0.5
0
Isolation (s
function of frequency; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 C.
4
1
21

2
1.5
8
) of the diode in off-state as a
12
2
BAP50-05W
Product specification
2.5
16
V R (V)
f (GHz)
MLD606
MLD608
20
3