BAP50-05W,115 NXP Semiconductors, BAP50-05W,115 Datasheet - Page 3

• Manufacturer Part Number: BAP50-05W,115
• Description: DIODE PIN GP 50V 50MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BAP50-05W,115

• Package / Case: SC-70-3, SOT-323-3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.5pF @ 5V, 1MHz
• Resistance @ If, F: 5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 240mW
• Configuration: Dual Common Cathode
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Carrier Life: 1.05 us
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.5 pF @ 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 5 Ohm @ 10 mA
• Maximum Series Resistance @ Minimum If: 40 Ohm @ 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 240 mW
• Forward Current: 50mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SC-70
• Mounting: Surface Mount
• Typical Carrier Life Time: 1.05us
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1920-2; 934056537115; BAP50-05W T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2001 Apr 17
Per diode
V
V
I
C
r
s
s
s
s

L
R
j
SYMBOL
R
SYMBOL
D
L
S
= 25 C unless otherwise specified.
F
R
21
21
21
21
General purpose PIN diode
d
th j-s




2
2
2
2
forward voltage
reverse voltage
reverse current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
I
V
V
V
V
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
when switched from I
I
measured at I
I
F
R
F
F
F
F
F
F
F
F
F
F
F
F
R
F
R
R
R
R
R
R
R
= 50 mA
= 0.5 mA; f = 100 MHz; note 1
= 1 mA; f = 100 MHz; note 1
= 10 mA; f = 100 MHz; note 1
= 0.5 mA; f = 900 MHz
= 0.5 mA; f = 1800 MHz
= 0.5 mA; f = 2450 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 100 MHz
= 10 A
= 6 mA; R
= 50 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 5 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
3
CONDITIONS
L
R
= 100 ;
= 3 mA
F
= 10 mA to

50





















MIN.
0.95


0.45
0.35
0.3
25
14
3
19
15.7
13.5
1.84
1.90
1.92
1.08
1.13
1.17
0.26
0.30
0.36
1.05
1.6
TYP.
VALUE
BAP50-05W
250
Product specification
1.1

100

0.6
0.5
40
25
5














MAX.
UNIT
K/W
V
V
nA
pF
pF
pF



dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
nH
UNIT