NTB75N03-6T4G ON Semiconductor, NTB75N03-6T4G Datasheet - Page 6

• Manufacturer Part Number: NTB75N03-6T4G
• Description: MOSFET N-CH 30V 75A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB75N03-6T4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 5V
• Input Capacitance (ciss) @ Vds: 5635pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VARIABLE
CONFIGURATION
ZONE
M
VIEW W−W
SEATING
PLANE
−T−
F
1
1
G
−B−
4
2
3
10.66
0.42
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
D
0.13 (0.005)
M
3 PL
S
VIEW W−W
NTP75N03−06, NTB75N03−06
M
F
2
8.38
0.33
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
T
B
http://onsemi.com
CASE 418AA−01
M
K
17.02
ISSUE O
0.67
D
2
C
PAK
6
A
M
U
E
J
V
W
W
VIEW W−W
3.05
0.12
SCALE 3:1
1.016
0.04
F
3
inches
mm
5.08
0.20
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
PER ANSI Y14.5M, 1982.
STYLE 2:
DIM
G
M
A
B
C
D
E
F
J
K
S
V
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
0.340
0.380
0.160
0.020
0.045
0.310
0.018
0.090
0.280
0.575
0.045
MIN
0.100 BSC
INCHES
0.380
0.405
0.190
0.036
0.055
0.025
0.625
0.055
0.110
MAX
−−−
−−−
14.60
MILLIMETERS
8.64
9.65
4.06
0.51
1.14
7.87
0.46
2.29
1.14
MIN
7.11
2.54 BSC
10.29
15.88
MAX
9.65
4.83
0.92
1.40
0.64
2.79
1.40
−−−
−−−