NTB75N03-6T4G ON Semiconductor, NTB75N03-6T4G Datasheet - Page 4

• Manufacturer Part Number: NTB75N03-6T4G
• Description: MOSFET N-CH 30V 75A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB75N03-6T4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 5V
• Input Capacitance (ciss) @ Vds: 5635pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.0070
0.0065
0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
0.0075
120
1.6
1.4
1.2
0.8
0.6
90
60
30
1
0
−50
0
Figure 5. On−Resistance Variation Temperature
0.2
Figure 3. On−Resistance vs. Drain Current and
10
V
V
V
I
−25
D
DS
GS
GS
Figure 1. On−Region Characteristics
0.4
= 37.5 A
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
20
= 10 V
= 10 V
T
J
0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
, JUNCTION TEMPERATURE (°C)
0
30
I
D
, DRAIN CURRENT (AMPS)
T
40
25
J
= 25°C
Temperature
V
50
V
T
T
GS
T
GS
J
J
J
50
= 100°C
= −55°C
= 4 V
= 25°C
V
V
V
V
= 4.5 V
60
GS
GS
GS
GS
= 5 V
= 6 V
= 8 V
= 10 V
75
70
NTP75N03−06, NTB75N03−06
80
100
V
V
GS
V
GS
GS
90 100
= 2.5 V
= 3.5 V
= 3 V
125
http://onsemi.com
120
150
2.6
4
1000
0.009
0.008
0.007
0.006
0.005
0.004
120
150
135
105
100
90
75
60
45
30
15
10
0
1
0.5
5
0
Figure 6. Drain−to−Source Leakage Current vs.
Figure 4. On−Resistance vs. Drain Current and
V
T
V
DS
J
V
GS
V
= 25°C
DS
GS
≥ 10 V
1
Figure 2. Transfer Characteristics
= 0 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
20
10
I
1.5
D
, DRAIN CURRENT (AMPS)
T
T
40
J
J
Gate Voltage
= 25°C
= 100°C
15
T
T
J
J
2
Voltage
= 125°C
= 100°C
V
V
GS
GS
60
2.5
= 10 V
= 5 V
20
T
80
J
= −55°C
3
25
100
3.5
120
30
4