SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet - Page 7

• Manufacturer Part Number: SPD06N80C3
• Description: MOSFET N-CH 800V 6A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD06N80C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3.9V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 785pF @ 100V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 8 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SO000318350; SP000077606; SPD06N80C3INTR; SPD06N80C3T; SPD06N80C3XT; SPD06N80C3XTINTR; SPD06N80C3XTINTR

9 Typ. gate charge
V
parameter: I
11 Avalanche SOA
I
par.: T
AR
Rev. 2.3
GS
= f (t
A
= f (Q
V
16
12
10
8
6
4
2
0
6
4
3
2
1
0
10
j
0
SPD06N80C3
0.2 V
0.8 V
AR
-3
150 °C
5
)
Gate
10
DS max
DS max
T J(Start) = 125°C
D
10
-2
= 6 A pulsed
)
10
15
-1
20
10
0
25
10
T J(Start) = 25°C
30
1
35
10
2
40 nC
Q
t
µs
AR
Gate
10
50
4
Page 7
10 Forward characteristics of body diode
I
parameter: T j , t
12 Avalanche energy
E
par.: I
F
AS
= f (V
mJ
10
10
10
10
250
200
175
150
125
100
= f (T
A
75
50
25
D
-1
0
2
1
0
25
0
SPD06N80C3
= 1.2 A, V
SD
j
)
)
0.4
50
0.8
p
= 10 µs
DD
1.2
75
T
T
T
T
= 50 V
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
100
SPD06N80C3
2
2005-10-05
2.4
°C
V
V
T
SD
j
150
3